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SURMOUNTTM Medium Barrier Silicon Schottky Diodes:
Cross-Over Quad Series Ultra-Small 600x600um Surface-Mount Chip
M/A-COM Products
Rev. V2
MADS-002545-1307M
ADVANCED: Data Sheets contain information regarding a product M/A-COM is considering for
development. Performance is based on target specifications, simulated results, and/or prototype
measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM has under develop-
ment. Performance is based on engineering tests. Specifications are typical. Mechanical outline has
been fixed. Engineering samples and/or test data may be available. Commitment to produce in
volume is not guaranteed.
North America Tel: 800.366.2266 / Fax: 978.366.2266
Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
MA-COM Technical Solutions and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice.
Features
Ultra Low Parasitic Capitance and Inductance
Surface Mountable in Microwave Circuits , No
Wirebonds Required
Rugged HMIC Construction with Polyimide
Scratch Protection
Reliable, Multilayer Metalization with a Diffusion
Barrier, 100% Stabilization Bake (300 °C, 16 hours)
Lower Susceptibility to ESD Damage
Description and Applications
The
MADS-002545-1307M
Series
SurMount
Medium Barrier, Silicon Schottky Cross-Over Quad Di-
odes are fabricated with the patented Heterolithic Mi-
crowave Integrated Circuit (HMIC) process. HMIC cir-
cuits consist of Silicon pedestals which form diodes or via
conductors embedded in a glass dielectric, which acts
as the low dispersion, low loss, microstrip transmission me-
dium. The combination of silicon and glass allows HMIC
devices to have excellent loss and power dissipation character-
istics in a low profile, reliable device.
The Surmount Schottky devices are excellent choices
for circuits requiring the small parasitics of a beam lead
device coupled with the superior mechanical performance of a
chip. The SurMount structure employs very low resistance
silicon vias to connect the Schottky contacts to the metal-
ized mounting pads on the bottom surface of the chip.
These devices are reliable, repeatable, and a lower
cost performance solution to conventional devices.
They have lower susceptibility to electrostatic discharge
than conventional beam lead Schottky diodes.
The multi-layer metalization employed in the fabrication of the
Surmount Schottky junctions includes a platinum diffu-
sion barrier, which permits all devices to be subjected to a 16-
hour non-operating stabilization bake at 300°C.
The “ 0202 ” outline allows for Surface Mount placement and
multi- functional polarity orientations. The MADS-002545-
1307M Series SurMount Medium Barrier Silicon Schottky
Cross-Over Quad Diodes are recommended for use in micro-
wave circuits through Ku band frequencies for lower power
applications such as mixers, sub-harmonic mixers, detectors
and limiters. The HMIC construction facilitates the direct re-
placement of more fragile beam lead diodes with the corre-
sponding Surmount diode, which can be connected to a hard
or soft substrate circuit with solder.
Case Style 1307
Dim
Inches
Millimeters
Min.
Max.
Min.
Max.
A
0.023
0.025
0.575
0.625
B
0.023
0.025
0.575
0.625
C
0.004
0.008
0.102
0.203
D Sq.
0.007
0.009
0.175
0.225
E Sq.
0.007
0.009
0.175
0.225
Topview
A
B
DE
D
C
Sideview
MADS-002545-1307M
Equivalent Circuit