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參數(shù)資料
| 型號(hào)： | MAP6KE16CATRE3 |
| 廠商： | MICROSEMI CORP-IRELAND |
| 元件分類： | TVS二極管 - 瞬態(tài)電壓抑制 |
| 英文描述： | 600 W, BIDIRECTIONAL, SILICON, TVS DIODE |
| 封裝： | ROHS COMPLIANT, PLASTIC, T-18, 2 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 320K |
| 代理商： | MAP6KE16CATRE3 |
TECHNICAL DATA SHEET
Gort Road Business Park, Ennis, Co. Clare, Ireland.
6 Lake Street, Lawrence, MA 01841
Tel: +353 (0) 65 6840044, Fax: +353 (0) 65 6822298
Tel: 1-800-446-1158 / (978) 794-1666, Fax: (978) 6890803
Website: http://www.microsemi.com
RF01007 Rev A, June 2010
High Reliability Product Group
Page 1 of 4
DEVICES
MP6KE6.8A thru MP6KE200CA, e3
LEVELS
M, MA, MX, MXL
FEATURES
High reliability controlled devices with wafer fabrication and assembly lot traceability
100 % surge tested devices
Optional upscreening available by replacing the M prefix with MA, MX or MXL. These prefixes
specify various screening and conformance inspection options based on MIL-PRF-19500.
Refer to MicroNote 129 for more details on the screening options.
Surface mount equivalents available as MSMBJ5.0A to MSMBJ170CA
Moisture classification is Level 1 with no dry pack required per IPC/JEDEC J-STD-020B
RoHS Compliant devices
available by adding “e3” suffix
3σ lot norm screening performed on Standby Current ID
APPLICATIONS / BENEFITS
Economical TVS series for thru-hole mounting
Protects sensitive components such as IC’s, CMOS, Bipolar, BiCMOS, ECL, DTL, T
2
L, etc.
Protection from switching transients & induced RF
Compliant to IEC 61000-4-2 and IEC 61000-4-4 for ESD and EFT protection respectively
Secondary lightning protection per IEC61000-4-5 with 42 Ohms source impedance:
o
Class 1: MP6KE6.8A to MP6KE130A or CA
o
Class 2: MP6KE6.8A to MP6KE68A or CA
o
Class 3: MP6KE6.8A to MP6KE36A or CA
o
Class 4: MP6KE6.8A to MP6KE18A or CA
Secondary lightning protection per IEC61000-4-5 with 12 Ohms source impedance:
o
Class 1: MP6KE6.8A to MP6KE43A or CA
o
Class 2: MP6KE6.8A to MP6KE22A or CA
MAXIMUM RATINGS
Peak Pulse Power dissipation at 25
°C: 600 watts at 10/1000 μs (also see Figures 1,2, and 3)
with impulse repetition rate (duty factor) of 0.01 % or less
tclamping (0 V to V(BR) min.): < 100 ps theoretical for unidirectional and < 5 ns for bidirectional
Operating and Storage temperature: -65
°C to +150 °C
Thermal Resistance: 25
°C/W at 3/8 inch (10 mm) lead length from body, or 85
C/W junction
to ambient when mounted on FR4 PC board with 4 mm
2 copper pads (1 oz) and track width 1
mm, length 25 mm
Steady-State Power: 5 watts @ TL=25
°C 3/8 inch (10 mm) from body, or 1.47 W when
mounted on FR4 PC board described for thermal resistance
Forward Voltage at 25
°C: 3.5 Volts maximum @ 100 Amp peak impulse of 8.3 ms half-sine
wave (unidirectional only)
Solder temperatures: 260
°C for 10 s (maximum)
T-18
600W Transient Voltage Suppressor
- High Reliability controlled devices
- Economical series for thru hole mounting
- Unidirectional (A) and Bidirectional (CA) construction
- Selections for 5.8 to 171 V standoff voltages (VWM)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MAP6KE170ATR | 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE |
| MAP6KE170CAE3 | 600 W, BIDIRECTIONAL, SILICON, TVS DIODE |
| MAP6KE180ATR | 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE |
| MAP6KE18AE3 | 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE |
| MAP6KE18CATRE3 | 600 W, BIDIRECTIONAL, SILICON, TVS DIODE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MAP6KE170A | 制造商:Microsemi Corporation 功能描述:TRANSIENT VOLTAGE SUPPRESSOR - Bulk |
| MAP6KE170AE3 | 制造商:Microsemi Corporation 功能描述:TRANSIENT VOLTAGE SUPPRESSOR - Bulk |
| MAP6KE170CA | 制造商:Microsemi Corporation 功能描述:TRANSIENT VOLTAGE SUPPRESSOR - Bulk |
| MAP6KE170CAE3 | 制造商:Microsemi Corporation 功能描述:TRANSIENT VOLTAGE SUPPRESSOR - Bulk |
| MAP6KE180A | 制造商:Microsemi Corporation 功能描述:TRANSIENT VOLTAGE SUPPRESSOR - Bulk |
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