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參數資料
型號: MASMBJ2K3.0E3TR
廠商: MICROSEMI CORP-SCOTTSDALE
元件分類: TVS二極管 - 瞬態電壓抑制
英文描述: 300 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA
封裝: ROHS COMPLIANT, PLASTIC, SMBJ, 2 PIN
文件頁數: 1/3頁
文件大小: 168K
代理商: MASMBJ2K3.0E3TR
UNIDIRECTIONAL LOW VOLTAGE
SURFACE MOUNT TRANSIENT
VOLTAGE SUPPRESSOR
WWW
.Microse
m
i
.CO
M
S C O T TS DALE DIVISION
SMBJ2K3.0 thru SMBJ2K5.0, e3
SMBG2K3.0 thru SMBG2K5.0, e3
SMBG
&J2
K
3.0-5.0
DESCRIPTION
APPEARANCE
The SMBJ2K3.0-5.0 or SMBG2K3.0-5.0 series of surface mount 2000 Watt
unidirectional Transient Voltage Suppressors (TVSs) provide low voltage
transient protection in a Working Standoff Voltage (VWM) selections from 3.0
to 5.0 volts. Response time of clamping action is virtually instantaneous and
may also be used for protection from ESD or EFT per IEC61000-4-2 and
IEC61000-4-4, or for inductive switching environments and induced RF.
They can also be used for protecting other sensitive components from
secondary lightning effects per IEC61000-4-5 and class levels defined
herein. Microsemi also offers numerous other TVS products to meet higher
and lower power demands and special applications. Also available in military
equivalent screening levels by adding a prefix identifier as further described
in the Features section. Microsemi also offers numerous other TVS products
to meet higher and lower power applications.
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
FEATURES
APPLICATIONS / BENEFITS
Suppresses transients up to 2000 watts @ 8/20 s (see
Figure 1 and 2)
Fast response
Optional 100% screening for avionics grade is available
by adding MA prefix to part number for added 100%
temperature cycle -55
oC to +125oC (10X) as well as surge
(3X) and 24 hours HTRB with post test VZ & IR (in the
operating direction for unidirectional or both directions for
bidirectional)
Options for screening in accordance with MIL-PRF-19500
for JAN, JANTX, and JANTXV are available by adding
MQ, MX, or MV prefixes respectively to part numbers.
Moisture classification is Level 1 with no dry pack required
per IPC/JEDEC J-STD-020B
RoHS Compliant devices available by adding “e3” suffix
Consult factory for bidirectional options
Selections for 3.0 to 5.0 V Working Peak Standoff
(VWM) voltage
Economical unidirectional TVS series in surface
mount with flat handling surface for accurate
placement
Voltage and reverse (leakage) current lowest
available
Protects sensitive components such as IC’s,
CMOS, Bipolar, BiCMOS, ECL, DTL, T
2L, etc.
Protection from switching transients & induced RF
Compliant to IEC61000-4-2 and IEC61000-4-4 for
ESD and EFT protection respectively
Secondary lightning protection per IEC61000-4-5
with 42 Ohms source impedance for Class 1
MAXIMUM RATINGS
MECHANICAL AND PACKAGING
Peak Pulse Power dissipation at 25oC: 2000 watts at 8/20
μs or 300 Watts at 10/1000 μs (also see Figure 1 and 4)
Clamping Voltage at 10 Amps @ 8/20 μs shown on page 2
Impulse repetition rate (duty factor): 0.01% maximum
tclamping (0 volts to V(BR) min.): < 100 ps
Operating and Storage temperature: -65oC to +150oC
Thermal resistance: 25 C/W junction to lead, or 90C/W
junction to ambient when mounted on FR4 PC board (1oz
Cu) with recommended footprint (see last page)
Steady-State Power dissipation: 5 watts at TL = 25oC, or
1.38 watts at TA = 25
C when mounted on FR4 PC board
with recommended footprint
Forward Voltage at 25oC: 3.5 Volts maximum @ 30 Amp
peak impulse of 8.3 ms half-sine wave (unidirectional only)
Solder temperatures: 260oC for 10 s (maximum)
CASE: Void-free transfer molded thermosetting
epoxy body meeting UL94V-0
FINISH: Tin-Lead or RoHS compliant annealed
matte-Tin plating over copper readily solderable
per MIL-STD-750, method 2026
MARKING: Body marked without SMBJ or SMBG
part number prefix, e.g. 2K3.0, 2K3.3, 2K4.0, etc.
POLARITY: Band denotes cathode
WEIGHT: 0.1 grams (approximate)
TAPE & REEL option: Standard per EIA-481-1-A
with 12 mm tape, 750 per 7 inch reel or 2500 per
13 inch reel (add “TR” suffix to part number)
See package dimensions on last page
Microsemi
Scottsdale Division
Page 1
Copyright
2007
6-21-2007 REV G
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
相關PDF資料
PDF描述
MQSMBJ2K5.0E3TR 300 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA
MASMBG2K4.0TR 300 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-215AA
MVSMBJ2K4.5TR 300 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA
MASMBJ2K4.5E3 300 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA
MVSMBJ2K3.3E3TR 300 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA
相關代理商/技術參數
參數描述
MASMBJ2K4.0 功能描述:TVS DIODE 4VWM 6.3VC DO215AA 制造商:microsemi ire division 系列:軍用,MIL-PRF-19500 包裝:散裝 零件狀態:上次購買時間 類型:齊納 單向通道:1 雙向通道:- 電壓 - 反向關態(典型值):4V 電壓 - 擊穿(最小值):5V 電壓 - 箝位(最大值)@ Ipp:6.3V 電流 - 峰值脈沖(10/1000μs):10A(8/20μs) 功率 - 峰值脈沖:2000W(2kW) 電源線路保護:無 應用:通用 不同頻率時的電容:- 工作溫度:-65°C ~ 150°C(TJ) 安裝類型:表面貼裝 封裝/外殼:DO-214AA,SMB 供應商器件封裝:SMBJ(DO-214AA) 標準包裝:1
MASMBJ2K4.0E3 制造商:Microsemi Corporation 功能描述:TVS 2KW UNIDIRECT DO-215AA 制造商:Microsemi Corporation 功能描述:TVS DIODE 4VWM 6.3VC DO215AA
MASMBJ2K4.5 制造商:Microsemi Corporation 功能描述:TVS DIODE 4.5VWM 6.6VC DO215AA 制造商:Microsemi Corporation 功能描述:TVS 2KW UNIDIRECT DO-215AA
MASMBJ2K4.5E3 制造商:Microsemi Corporation 功能描述:TVS 2KW UNIDIRECT DO-215AA 制造商:Microsemi Corporation 功能描述:TVS DIODE 4.5VWM 6.6VC DO215AA
MASMBJ2K5.0 功能描述:TVS DIODE 5VWM 7.6VC DO215AA 制造商:microsemi ire division 系列:軍用,MIL-PRF-19500 包裝:散裝 零件狀態:上次購買時間 類型:齊納 單向通道:1 雙向通道:- 電壓 - 反向關態(典型值):5V 電壓 - 擊穿(最小值):5.9V 電壓 - 箝位(最大值)@ Ipp:7.6V 電流 - 峰值脈沖(10/1000μs):10A(8/20μs) 功率 - 峰值脈沖:2000W(2kW) 電源線路保護:無 應用:通用 不同頻率時的電容:- 工作溫度:-65°C ~ 150°C(TJ) 安裝類型:表面貼裝 封裝/外殼:DO-214AA,SMB 供應商器件封裝:SMBJ(DO-214AA) 標準包裝:1
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