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參數(shù)資料
| 型號(hào)： | MAT-03AH |
| 廠商： | ANALOG DEVICES INC |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 20 mA, 36 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-78 |
| 文件頁數(shù)： | 1/12頁 |
| 文件大?。?/td> | 254K |
| 代理商： | MAT-03AH |
REV. B
Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties
which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of Analog Devices.
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Fax: 617/326-8703
MAT03
Low Noise, Matched
Dual PNP Transistor
FEATURES
Dual Matched PNP Transistor
Low Offset Voltage: 100
V max
Low Noise: 1 nV/
√Hz @ 1 kHz max
High Gain: 100 min
High Gain Bandwidth: 190 MHz typ
Tight Gain Matching: 3% max
Excellent Logarithmic Conformance: rBE
0.3
typ
Available in Die Form
PIN CONNECTION
TO-78
(H Suffix)
GENERAL DESCRIPTION
The MAT03 dual monolithic PNP transistor offers excellent
parametric matching and high frequency performance. Low
noise characteristics (1 nV/
√Hz max @ 1 kHz), high bandwidth
(190 MHz typical), and low offset voltage (100
V max), makes
the MAT03 an excellent choice for demanding preamplifier ap-
plications. Tight current gain matching (3% max mismatch) and
high current gain (100 min), over a wide range of collector cur-
rent, makes the MAT03 an excellent choice for current mirrors.
A low value of bulk resistance (typically 0.3
) also makes the
MAT03 an ideal component for applications requiring accurate
logarithmic conformance.
Each transistor is individually tested to data sheet specifications.
Device performance is guaranteed at 25
°C and over the extended
industrial and military temperature ranges. To insure the long-
term stability of the matching parameters, internal protection
diodes across the base-emitter junction clamp any reverse base-
emitter junction potential. This prevents a base-emitter break-
down condition which can result in degradation of gain and
matching performance due to excessive breakdown current.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MAT03AH/883 | 20 mA, 36 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-78 |
| MAT-04NBC | 30 mA, 40 V, 4 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR |
| MAT-04NBCG | 30 mA, 40 V, 4 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR |
| MAT-04NACG | 30 mA, 40 V, 4 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR |
| MAT-04NAC | 30 mA, 40 V, 4 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MAT03AH/883C | 制造商:Rochester Electronics LLC 功能描述:HI-SPEED DUAL PNP TRANS-L - Bulk |
| MAT03ARC/883C | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| MAT03EH | 功能描述:IC TRANS DUAL MATCHED PNP TO78-6 RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> 晶體管(BJT) - 陣列 系列:- 標(biāo)準(zhǔn)包裝:10,000 系列:- 晶體管類型:2 NPN（雙） 電流 - 集電極 (Ic)（最大）:100mA 電壓 - 集電極發(fā)射極擊穿（最大）:45V Ib、Ic條件下的Vce飽和度（最大）:600mV @ 5mA，100mA 電流 - 集電極截止（最大）:- 在某 Ic、Vce 時(shí)的最小直流電流增益 (hFE):200 @ 2mA，5V 功率 - 最大:250mW 頻率 - 轉(zhuǎn)換:250MHz 安裝類型:表面貼裝 封裝/外殼:6-TSSOP，SC-88，SOT-363 供應(yīng)商設(shè)備封裝:PG-SOT363-6 包裝:帶卷 (TR) 其它名稱:SP000747402 |
| MAT03EHZ | 功能描述:IC TRANS DUAL MATCHED PNP TO78-6 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> 晶體管(BJT) - 陣列 系列:- 標(biāo)準(zhǔn)包裝:10,000 系列:- 晶體管類型:2 NPN（雙） 電流 - 集電極 (Ic)（最大）:100mA 電壓 - 集電極發(fā)射極擊穿（最大）:45V Ib、Ic條件下的Vce飽和度（最大）:600mV @ 5mA，100mA 電流 - 集電極截止（最大）:- 在某 Ic、Vce 時(shí)的最小直流電流增益 (hFE):200 @ 2mA，5V 功率 - 最大:250mW 頻率 - 轉(zhuǎn)換:250MHz 安裝類型:表面貼裝 封裝/外殼:6-TSSOP，SC-88，SOT-363 供應(yīng)商設(shè)備封裝:PG-SOT363-6 包裝:帶卷 (TR) 其它名稱:SP000747402 |
| MAT03FH | 功能描述:IC TRANS DUAL MATCHED PNP TO78-6 RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> 晶體管(BJT) - 陣列 系列:- 標(biāo)準(zhǔn)包裝:10,000 系列:- 晶體管類型:2 NPN（雙） 電流 - 集電極 (Ic)（最大）:100mA 電壓 - 集電極發(fā)射極擊穿（最大）:45V Ib、Ic條件下的Vce飽和度（最大）:600mV @ 5mA，100mA 電流 - 集電極截止（最大）:- 在某 Ic、Vce 時(shí)的最小直流電流增益 (hFE):200 @ 2mA，5V 功率 - 最大:250mW 頻率 - 轉(zhuǎn)換:250MHz 安裝類型:表面貼裝 封裝/外殼:6-TSSOP，SC-88，SOT-363 供應(yīng)商設(shè)備封裝:PG-SOT363-6 包裝:帶卷 (TR) 其它名稱:SP000747402 |
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