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參數(shù)資料
型號(hào): MAT03GBC
廠商: ANALOG DEVICES INC
元件分類(lèi): 小信號(hào)晶體管
英文描述: 20 mA, 36 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-78
封裝: METAL CAN-6
文件頁(yè)數(shù): 1/13頁(yè)
文件大小: 259K
代理商: MAT03GBC
REV. B
Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties
which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of Analog Devices.
a
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 617/329-4700
Fax: 617/326-8703
MAT03
Low Noise, Matched
Dual PNP Transistor
FEATURES
Dual Matched PNP Transistor
Low Offset Voltage: 100
V max
Low Noise: 1 nV/
√Hz @ 1 kHz max
High Gain: 100 min
High Gain Bandwidth: 190 MHz typ
Tight Gain Matching: 3% max
Excellent Logarithmic Conformance: rBE
0.3
typ
Available in Die Form
PIN CONNECTION
TO-78
(H Suffix)
GENERAL DESCRIPTION
The MAT03 dual monolithic PNP transistor offers excellent
parametric matching and high frequency performance. Low
noise characteristics (1 nV/
Hz max @ 1 kHz), high bandwidth
(190 MHz typical), and low offset voltage (100
V max), makes
the MAT03 an excellent choice for demanding preamplifier ap-
plications. Tight current gain matching (3% max mismatch) and
high current gain (100 min), over a wide range of collector cur-
rent, makes the MAT03 an excellent choice for current mirrors.
A low value of bulk resistance (typically 0.3
) also makes the
MAT03 an ideal component for applications requiring accurate
logarithmic conformance.
Each transistor is individually tested to data sheet specifications.
Device performance is guaranteed at 25
°C and over the extended
industrial and military temperature ranges. To insure the long-
term stability of the matching parameters, internal protection
diodes across the base-emitter junction clamp any reverse base-
emitter junction potential. This prevents a base-emitter break-
down condition which can result in degradation of gain and
matching performance due to excessive breakdown current.
相關(guān)PDF資料
PDF描述
MAT04BIEY 30 mA, 40 V, 4 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR
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MAT04AY 30 mA, 40 V, 4 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR
MAT04BY 30 mA, 40 V, 4 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR
相關(guān)代理商/技術(shù)參數(shù)
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