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參數資料
| 型號： | MAX4370ESA+T |
| 廠商： | Maxim Integrated |
| 文件頁數： | 10/16頁 |
| 文件大?。?/td> | 432K |
| 描述： | IC CNTRLR HOT-SWAP 8-SOIC |
| 產品培訓模塊： | Lead (SnPb) Finish for COTS Obsolescence Mitigation Program |
| 標準包裝： | 2,500 |
| 類型： | 熱交換控制器 |
| 應用： | 通用 |
| 內部開關： | 無 |
| 電源電壓： | 2.7 V ~ 13.2 V |
| 工作溫度： | -40°C ~ 85°C |
| 安裝類型： | 表面貼裝 |
| 封裝/外殼： | 8-SOIC（0.154"，3.90mm 寬） |
| 供應商設備封裝： | 8-SOIC |
| 包裝： | 帶卷 (TR) |
Current-Regulating Hot-Swap Controller with
DualSpeed/BiLevel Fault Protection
10 ______________________________________________________________________________________
Status Output
The status output is an open-drain output that goes low
when the part is:
1) in start-up
2) forced off (on = GND)
3) in an overcurrent condition, or
4) latched off.
STAT is high only if the part is in normal mode and no
faults are present (Table 1). Figure 4 shows the STAT
timing diagram.
Over/Undervoltage Lockouts
The undervoltage lockout prevents the MAX4370 from
turning on the external MOSFET until the input voltage
at V
IN
exceeds the lockout threshold (2.25V min) for at
least 150ms. The undervoltage lockout protects the
external MOSFET from insufficient gate drive voltage.
The 150ms timeout ensures that the board is fully
plugged into the backplane and that V
IN
is stable.
Voltage transients at V
IN
with voltages below the UVLO
will reset the device and initiate a start-up sequence.
The device also features a gate overvoltage lockout
that prevents the device from restarting after a fault
condition if the discharge has not been completed.
V
GATE
must be discharged to below 0.1V before
restarting. Since the MAX4370 does not monitor the
output voltage, a start-up sequence can be initiated
while the board capacitance is still charged.
Gate Overvoltage Protection
Newer-generation MOSFETs have an absolute maxi -
mum rating of ?V for the gate-to-source voltage (V
GS
).
To protect these MOSFETs, the MAX4370 limits the
gate-to-drain (V
GD
) to +7.5V with an internal zener
diode. No protection is provided for negative V
GD
. If
GATE can be discharged to GND faster than the output
voltage, an external small-signal protection diode (D1)
can be used, as shown in Figure 5.
Table 1. Status Output Truth Table
PART IN
START-UP
X
Yes
ON PIN
OVERCURRENT
CONDITION ON V
IN
X
X
PART IN LATCHED-OFF MODE
DUE TO OVERCURRENT
CONDITION
Low
STAT PIN
(STATUS)
X
X
Low
Low
No
X
Yes
Low
Yes
No
Low
High
No
High
No
No
No
High
High
No
OV
1.2V
OV
OV
STAT
CTIM
ON
FAULT
CONDITION
OR ON
FALLING EDGE
NO FAULT CONDITIONS
PRESENT
V
IN
V
IN
Figure 4. Status Output (STAT) Timing Diagram
D1
GATE
R
SENSE
V
OUT
V
GD
V
GS
C
BOARD
V
IN
V
SEN
M1
N
MAX4370
GATE DRIVE
CHARGE PUMP
Figure 5. External Gate-Source Protection
X = Dont care
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