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參數(shù)資料
型號: MAZ8330-H
廠商: PANASONIC CORP
元件分類: 參考電壓二極管
英文描述: Silicon planar type
中文描述: 34 V, 0.15 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
封裝: S-MINI PACKAGE-2
文件頁數(shù): 1/5頁
文件大?。?/td> 69K
代理商: MAZ8330-H
1
Zener Diodes
MAZ8000
Series
Silicon planar type
For stabilization of power supply
I
Features
Extremely low noise voltage caused from the diode (2.4V to 39V,
1/3 to 1/10 of our conventional MAZ3000 series)
Extremely good rising performance (in the low-current range)
Easy-to-select the optimum diode because of their finely divided
zener-voltage ranks
Guaranteed reliability, equivalent to that of conventional products
(Mini type package)
Allowing to reduce the mounting area, thickness and weight sub-
stantially, compared with those of the conventional products
Allowing both reflow and flow mode of automatic soldering
Allowing automatic mounting by an existing chip mounter
I
Absolute Maximum Ratings
T
a
=
25
°
C
Unit : mm
Parameter
Symbol
Rating
Unit
Repetitive peak forward current
I
FRM
P
tot
200
mA
Total power dissipation
*
150
mW
Junction temperature
T
j
T
stg
150
°
C
°
C
Storage temperature
55 to
+
150
I
Common Electrical Characteristics
T
a
=
25
°
C
*1
Note) 1 Rated input/output frequency: 5 MHz
2 *1 : The V
Z
value is for the temperature of 25
°
C. In other cases, carry out the temperature compensation.
*2 : Guaranteed at 20 ms after power application.
*3 : T
j
= 25
°
C to 150
°
C
1 : Anode
2 : Cathode
S-Mini Type Package (2-pin)
Note) * : With a printed-circuit board
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Forward voltage
Zener voltage
*2
V
F
I
F
= 10 mA
0.9
1.0
V
V
Z
R
ZK
R
Z
I
Z··················
Specified value
I
Z··················
Specified value
I
Z··················
Specified value
V
Operating resistance
μ
A
Reverse current
I
R
S
Z
V
R···············
Specified value
I
Z··················
Specified value
Temperature coefficient of zener voltage
*3
mV/
°
C
Refer to the list of the
electrical characteristics
within part numbers
1
2
K
A
0
0
1
±
0
0
±
0
0
±
0
2.5
±
0.2
1.7
±
0.1
0.4
±
0.1
0.4
±
0.1
0
+
0
0
Marking Symbol
Refer to the list of the electrical
characteristics within part numbers
(Example) MAZ8082-H
: 8^2
Note) L/M/H marked products will be sup-
plied unless other wise specified
相關(guān)PDF資料
PDF描述
MAZ8330-L Silicon planar type
MAZ8330-M Silicon planar type
MAZ8360 Silicon planar type
MAZ8360-H Silicon planar type
MAZ8360-L Silicon planar type
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MAZ8330-L 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon planar type
MAZ8330-M 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon planar type
MAZ8360 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon planar type
MAZ83600ML 功能描述:DIODE ZENER 36V 150MW S-MINI 2P RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> 單二極管/齊納 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 電壓 - 齊納(標(biāo)稱)(Vz):36V 電壓 - 在 If 時為正向 (Vf)(最大):900mV @ 10mA 電流 - 在 Vr 時反向漏電:100nA @ 27V 容差:±5% 功率 - 最大:200mW 阻抗(最大)(Zzt):70 歐姆 安裝類型:表面貼裝 封裝/外殼:SC-70,SOT-323 供應(yīng)商設(shè)備封裝:SOT-323 包裝:剪切帶 (CT) 工作溫度:-65°C ~ 150°C 產(chǎn)品目錄頁面:1585 (CN2011-ZH PDF) 其它名稱:MMBZ5258BWMMBZ5258BWCTMMBZ5258BWCT-NDMMBZ5258BWDICT
MAZ8360GML 功能描述:DIODE ZENER 36V 150MW S-MINI 2P RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> 單二極管/齊納 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 電壓 - 齊納(標(biāo)稱)(Vz):36V 電壓 - 在 If 時為正向 (Vf)(最大):900mV @ 10mA 電流 - 在 Vr 時反向漏電:100nA @ 27V 容差:±5% 功率 - 最大:200mW 阻抗(最大)(Zzt):70 歐姆 安裝類型:表面貼裝 封裝/外殼:SC-70,SOT-323 供應(yīng)商設(shè)備封裝:SOT-323 包裝:剪切帶 (CT) 工作溫度:-65°C ~ 150°C 產(chǎn)品目錄頁面:1585 (CN2011-ZH PDF) 其它名稱:MMBZ5258BWMMBZ5258BWCTMMBZ5258BWCT-NDMMBZ5258BWDICT
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