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參數(shù)資料
| 型號(hào)： | MAZ9100H |
| 廠商： | PANASONIC CORP |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | For surge absorption circuit |
| 中文描述： | 10 V, 0.2 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE |
| 封裝： | SC-59, MINI3-G1, 3 PIN |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大小： | 85K |
| 代理商： | MAZ9100H |
ESD Diodes
MAZ9xxxH Series
Silicon planar type
1
Publication date: March 2004
SKE00008CED
For surge absorption circuit
■
Features
Two elements anode-common type
Power dissipation P
D
: 200 mW
■
Absolute Maximum Ratings
T
a
=
25
°
C
Unit: mm
Parameter
Symbol
Rating
Unit
Power dissipation
*
P
D
T
j
200
mW
Junction temperature
150
°
C
°
C
Storage temperature
T
stg
55 to
+
150
■
Common Electrical Characteristics
T
a
=
25
°
C
± 3°
C
Note)*: P
D
= 200 mW achieved with a printed circuit board.
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Zener voltage
*
V
Z
I
Z
Specified value
V
Zener rise operating resistance
R
ZK
R
Z
I
Z
I
Z
Specified value
μ
A
Zener operating resistance
Specified value
Reverse current
I
R
V
R
Specified value
0.40
+0.10
(
1
+
–
2
+
–
2
1
3
(0.95) (0.95)
1.9
±
0.1
2.90
+0.20
0.16
+0.10
0
±
0
5
10
0
1
+
–
1
+
–
Refer to the list of the
electrical characteristics
within part numbers
Internal Connection
1
3
2
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Electrostatic breakdown voltage:
±
10 kV
Test method: IEC1000-4-2 (C
=
150 pF, R
=
330
, Contact discharge: 10 times)
3. *: The temperature must be controlled 25°C for V
Z
mesurement.
V
Z
value measured at other temperature must be adjusted to V
Z
(25°C)
V
Z
guaranted 20 ms after current flow.
1: Cathode 1
2: Cathode 2
3: Anode
Mini3-G1 Package
EIAJ: SC-59
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