- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄380461 > MB84VB2000-10 (FUJITSU LTD) 8M (x 8/x 16) FLASH MEMORY & 8M (x 8/x 16) FLASH MEMORY PDF資料下載
參數(shù)資料
| 型號： | MB84VB2000-10 |
| 廠商： | FUJITSU LTD |
| 元件分類： | DRAM |
| 英文描述： | 8M (x 8/x 16) FLASH MEMORY & 8M (x 8/x 16) FLASH MEMORY |
| 中文描述： | 1M X 8 FLASH 3V PROM, 100 ns, PBGA48 |
| 封裝： | PLASTIC, FBGA-48 |
| 文件頁數(shù)： | 1/28頁 |
| 文件大小： | 314K |
| 代理商： | MB84VB2000-10 |
當前第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁
DS05-50102-2E
FUJITSU SEMICONDUCTOR
DATA SHEET
Embedded Erase
TM
and Embedded Program
TM
are trademarks of Advanced Micro Devices, Inc.
MCP (Multi-Chip Package) FLASH MEMORY
CMOS
8M (
×
8/
×
16) FLASH MEMORY &
8M (
×
8/
×
16) FLASH MEMORY
MB84VB2000
-10
/MB84VB2001
-10
I
FEATURES
Contain 2 chips of MBM29LV800A, and each chip have separate CE.
Power supply voltage of 2.7 to 3.6 V
High performance
100 ns maximum access time
Operating Temperature
–40 to +85
°
C
Minimum 100,000 write/erase cycles
Sector erase architecture
One 16 K byte, two 8 K bytes, one 32 K byte, and fifteen 64 K bytes
×
2 chips
Any combination of sectors can be concurrently erased. Also supports full chip erase.
Boot Code Sector Architecture
MB84VB2000: Top sector
MB84VB2001: Bottom sector
Embedded Erase
TM
Algorithms
Automatically pre-programs and erases the chip or any sector
Embedded Program
TM
Algorithms
Automatically writes and verifies data at specified address
Data Polling and Toggle Bit feature for detection of program or erase cycle completion
Ready/Busy output (RY/BY)
Hardware method for detection of program or erase cycle completion
Automatic sleep mode
When addresses remain stable, automatically switch themselves to low power mode.
Low V
CC
write inhibit
≤
2.5 V
Erase Suspend/Resume
Suspends the erase operation to allow a read data in another sector within the same device
Please refer to "MBM29LV800TA/BA" data sheet in detailed function
相關PDF資料 |
PDF描述 |
|---|---|
| MB84VB2001 | 8M (x 8/x 16) FLASH MEMORY & 8M (x 8/x 16) FLASH MEMORY |
| MB84VD2002-10 | Circular Connector; Body Material:Aluminum Alloy; Series:MS3110; No. of Contacts:19; Connector Shell Size:14; Connecting Termination:Solder; Circular Shell Style:Wall Mount Receptacle; Circular Contact Gender:Socket RoHS Compliant: No |
| MB84VD2002 | 8M (x 8/x 16) FLASH MEMORY & 2M (x 8) STATIC RAM |
| MB84VD2003 | 8M (x 8/x 16) FLASH MEMORY & 2M (x 8) STATIC RAM |
| MB84VD2003-10 | 8M (x 8/x 16) FLASH MEMORY & 2M (x 8) STATIC RAM |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MB84VB2001 | 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:8M (x 8/x 16) FLASH MEMORY & 8M (x 8/x 16) FLASH MEMORY |
| MB84VB2001-10 | 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:8M (x 8/x 16) FLASH MEMORY & 8M (x 8/x 16) FLASH MEMORY |
| MB84VD2002 | 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:8M (x 8/x 16) FLASH MEMORY & 2M (x 8) STATIC RAM |
| MB84VD2002-10 | 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:8M (x 8/x 16) FLASH MEMORY & 2M (x 8) STATIC RAM |
| MB84VD2003 | 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:8M (x 8/x 16) FLASH MEMORY & 2M (x 8) STATIC RAM |
發(fā)布緊急采購，3分鐘左右您將得到回復。