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參數資料
| 型號： | MBD110DWT1 |
| 廠商： | 樂山無線電股份有限公司 |
| 英文描述： | Dual SCHOTTKY Barrier Diodes |
| 中文描述： | 雙肖特基二極管 |
| 文件頁數： | 1/8頁 |
| 文件大?。?/td> | 180K |
| 代理商： | MBD110DWT1 |
1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Application circuit designs are moving toward the consolidation of device count and
into smaller packages. The new SOT–363 package is a solution which simplifies
circuit design, reduces device count, and reduces board space by putting two discrete
devices in one small six–leaded package. The SOT–363 is ideal for low–power
surface mount applications where board space is at a premium, such as portable
products.
Surface Mount Comparisons:
SOT–363
SOT–23
Area (mm2)
Max Package PD (mW)
Device Count
4.6
120
2
7.6
225
1
Space Savings:
Package
1
SOT–23
2
SOT–23
SOT–363
40%
70%
The MBD110DW, MBD330DW, and MBD770DW devices are spin–offs of our
popular MMBD101LT1, MMBD301LT1, and MMBD701LT1 SOT–23 devices. They
are designed for high–efficiency UHF and VHF detector applications. Readily
available to many other fast switching RF and digital applications.
Extremely Low Minority Carrier Lifetime
Very Low Capacitance
Low Reverse Leakage
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Reverse Voltage
MBD110DWT1
MBD330DWT1
MBD770DWT1
VR
7.0
30
70
Vdc
Forward Power Dissipation
TA = 25
°
C
PF
120
mW
Junction Temperature
TJ
Tstg
–55 to +125
°
C
Storage Temperature Range
–55 to +150
°
C
DEVICE MARKING
MBD110DWT1 = M4
MBD330DWT1 = T4
MBD770DWT1 = H5
Thermal Clad is a trademark of the Bergquist Company.
Preferred
devices are Motorola recommended choices for future use and best overall value.
Order this document
by MBD110DWT1/D
SEMICONDUCTOR TECHNICAL DATA
CASE 419B–01, STYLE 6
SOT–363
123
654
Motorola Preferred Devices
相關PDF資料 |
PDF描述 |
|---|---|
| MBD770DWT1 | Dual SCHOTTKY Barrier Diodes |
| MBR2515L | SWITCHMODE⑩ Power Rectifier |
| MBR4015LWT | SWITCHMODE⑩ Power Rectifier |
| MBR4015 | SWITCHMODE⑩ Power Rectifier |
| MBR5025L | SWITCHMODE⑩ Power Rectifier |
相關代理商/技術參數 |
參數描述 |
|---|---|
| MBD110DWT1_07 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Dual Schottky Barrier Diodes |
| MBD110DWT1G | 功能描述:肖特基二極管與整流器 7V 120mW Dual Isolated RoHS:否 制造商:Skyworks Solutions, Inc. 產品:Schottky Diodes 峰值反向電壓:2 V 正向連續電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
| MBD110DWT1G_07 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Dual Schottky Barrier Diodes |
| MBD110DWT1G_12 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Dual Schottky Barrier Diodes |
| MBD14 | 功能描述:ACCY MOUNT BMM 3/4" TFX RoHS:是 類別:RF/IF 和 RFID >> RF配件 系列:* 標準包裝:1 系列:* |
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