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參數資料
| 型號： | MBD110DWT1 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Dual Schottky Barrier Diodes(雙肖特基勢壘二極管) |
| 中文描述： | SILICON, VHF-UHF BAND, MIXER DIODE |
| 封裝： | CASE 419B-02, SC-88, SC-70, 6 PIN |
| 文件頁數： | 1/6頁 |
| 文件大?。?/td> | 64K |
| 代理商： | MBD110DWT1 |
Semiconductor Components Industries, LLC, 2006
February, 2006 Rev. 4
1
Publication Order Number:
MBD110DWT1/D
MBD110DWT1,
MBD330DWT1,
MBD770DWT1
Preferred Device
Dual Schottky Barrier
Diodes
Application circuit designs are moving toward the consolidation of
device count and into smaller packages. The new SOT363 package is
a solution which simplifies circuit design, reduces device count, and
reduces board space by putting two discrete devices in one small
sixleaded package. The SOT363 is ideal for lowpower surface
mount applications where board space is at a premium, such as
portable products.
Surface Mount Comparisons:
SOT363
SOT23
Area (mm
2
)
Max Package P
D
(mW)
Device Count
4.6
120
2
7.6
225
1
Space Savings:
Package
1
SOT23
2
SOT23
SOT363
40%
70%
The MBD110DW, MBD330DW, and MBD770DW devices are
spinoffs of our popular MMBD101LT1, MMBD301LT1, and
MMBD701LT1 SOT23 devices. They are designed for
highefficiency UHF and VHF detector applications. Readily
available to many other fast switching RF and digital applications.
Features
Extremely Low Minority Carrier Lifetime
Very Low Capacitance
Low Reverse Leakage
PbFree Packages are Available
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Reverse Voltage
MBD110DWT1
MBD330DWT1
MBD770DWT1
V
R
7.0
30
70
Vdc
Forward Power Dissipation T
A
= 25
°
C
P
F
120
mW
Junction Temperature
T
J
55 to +125
°
C
Storage Temperature Range
T
stg
55 to +150
°
C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
Preferred
devices are recommended choices for future use
and best overall value.
http://onsemi.com
SC88 / SOT363
CASE 419B
STYLE 6
MARKING DIAGRAM
Anode 1
6 Cathode
Cathode 3
4 Anode
N/C 2
5 N/C
xx M
xx
= Device Code
Refer to Ordering Table,
page 2
= Date Code
= PbFree Package
(Note: Microdot may be in either location)
M
1
6
1
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
相關PDF資料 |
PDF描述 |
|---|---|
| MBD330DWT1 | Dual Schottky Barrier Diodes(雙肖特基勢壘二極管) |
| MBD701 | Silicon Hot-Carrier Diodes(硅熱載二極管) |
| MBR0520LT1 | Surface Mount Schottky Barrier Power Rectifier(0.5A,20V表貼型肖特基勢壘功率整流器) |
| MBR0520LT3 | Surface Mount Schottky Barrier Power Rectifier(0.5A,20V表貼型肖特基勢壘功率整流器) |
| MBR0530T1 | Surface Mount Schottky Barrier Power Rectifier(0.5A,30V表貼型肖特基勢壘功率整流器) |
相關代理商/技術參數 |
參數描述 |
|---|---|
| MBD110DWT1_07 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Dual Schottky Barrier Diodes |
| MBD110DWT1G | 功能描述:肖特基二極管與整流器 7V 120mW Dual Isolated RoHS:否 制造商:Skyworks Solutions, Inc. 產品:Schottky Diodes 峰值反向電壓:2 V 正向連續電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
| MBD110DWT1G_07 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Dual Schottky Barrier Diodes |
| MBD110DWT1G_12 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Dual Schottky Barrier Diodes |
| MBD14 | 功能描述:ACCY MOUNT BMM 3/4" TFX RoHS:是 類別:RF/IF 和 RFID >> RF配件 系列:* 標準包裝:1 系列:* |
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