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參數(shù)資料
| 型號： | MBD301G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Silicon Hot−Carrier Diodes SCHOTTKY Barrier Diodes |
| 中文描述： | SILICON, UHF BAND, MIXER DIODE, TO-226AC |
| 封裝： | HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, CASE 182-06, TO-92, 2 PIN |
| 文件頁數(shù)： | 1/5頁 |
| 文件大小： | 74K |
| 代理商： | MBD301G |
Semiconductor Components Industries, LLC, 2007
January, 2007 Rev. 4
1
Publication Order Number:
MBD301/D
MBD301, MMBD301LT1
Preferred Device
Silicon HotCarrier Diodes
SCHOTTKY Barrier Diodes
These devices are designed primarily for highefficiency UHF and
VHF detector applications. They are readily adaptable to many other
fast switching RF and digital applications. They are supplied in an
inexpensive plastic package for lowcost, highvolume consumer
and industrial/commercial requirements. They are also available in a
Surface Mount package.
Features
Extremely Low Minority Carrier Lifetime 15 ps (Typ)
Very Low Capacitance 1.5 pF (Max) @ V
R
= 15 V
Low Reverse Leakage I
R
= 13 nAdc (Typ) MBD301, MMBD301
PbFree Packages are Available
MAXIMUM RATINGS
MBD301
MMBD301LT1
Rating
Symbol
Value
Unit
Reverse Voltage
V
R
30
V
Total Device Dissipation
@ T
A
= 25
°
C
Derate above 25
°
C
P
F
280
2.8
200
2.0
mW
mW/
°
C
Operating Junction
Temperature Range
T
J
55 to +125
°
C
Storage Temperature Range
T
stg
55 to +150
°
C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
A
Y
WW
= Assembly Location
= Year
= Work Week
= PbFree Package
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
MARKING
DIAGRAM
MBD
301
AYWW
Preferred
devices are recommended choices for future use
and best overall value.
TO92
(TO226AC)
CASE 182
STYLE 1
4T M
MBD301
SOT23
(TO236)
CASE 318
STYLE 8
30 VOLTS
SILICON HOTCARRIER
DETECTOR AND SWITCHING
DIODES
1
2
3
1
2
3
CATHODE
1
ANODE
2
CATHODE
1
ANODE
1
MMBD301LT1
M
= Date Code
= PbFree Package
MARKING
DIAGRAM
(Note: Microdot may be in either location)
(Note: Microdot may be in either location)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MBD330DWT1 | Dual SCHOTTKY Barrier Diodes |
| MBD701G | Silicon Hot−Carrier Diodes Schottky Barrier Diodes |
| MBR0520LT1G | Surface Mount Schottky Power Rectifier Plastic SOD−123 Package |
| MBR0520LT3G | Surface Mount Schottky Power Rectifier Plastic SOD−123 Package |
| MBR0530-CA2-R | SCHOTTKY RECTIFIER DIODE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MBD301G | 制造商:ON Semiconductor 功能描述:Small Signal Diode 制造商:ON Semiconductor 功能描述:SCHOTTKY RECTIFIER, 10mA, 30V TO-92 |
| MBD301LT1 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:30 VOLTS SILICON HOT.CARRIER DETECTOR AND SWITCHING DIODES |
| MBD330D | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:Dual Schottky Barrier Diodes |
| MBD330DWT1 | 功能描述:肖特基二極管與整流器 30V 120mW Dual RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
| MBD330DWT1G | 功能描述:肖特基二極管與整流器 30V 120mW Dual Isolated RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
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