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參數資料
| 型號： | MBDF1200Z |
| 廠商： | Motorola, Inc. |
| 英文描述： | 3A,20V TMOS Dual N-Channel with Monolithic Zener ESD Protected Gate(3A,20V TMOS N溝道功率MOSFET（帶單片齊納ESD保護門）) |
| 中文描述： | 第3A，20V的TMOS是雙N溝道與單片ESD保護齊納門第（3A，20V的TMOS是?溝道功率MOSFET的（帶單片齊納的ESD保護門）） |
| 文件頁數： | 1/10頁 |
| 文件大小： | 187K |
| 代理商： | MBDF1200Z |
1
Motorola TMOS Power MOSFET Transistor Device Data
Medium Power Surface Mount Products
! "
EZFETs
are an advanced series of power MOSFETs which
utilize Motorola’s High Cell Density HDTMOS process and contain
monolithic back–to–back zener diodes. These zener diodes
provide protection against ESD and unexpected transients. These
miniature surface mount MOSFETs feature ultra low RDS(on) and
true logic level performance. EZFET
devices are designed for use
in low voltage applications where power efficiency is important.
Typical applications are Li–ion battery protection, and power
management in portable and battery powered products such as
computers, printers, cellular and cordless phones.
Zener Protected Gates Provide Electrostatic Discharge Protection
Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life
Logic Level Gate Drive — Can Be Driven by Logic ICs
Miniature TSSOP–8 Surface Mount Package — Saves Board Space
IDSS Specified at Elevated Temperature
Mounting Information for TSSOP–8 Package Provided
MAXIMUM RATINGS
(TJ = 25
°
C unless otherwise noted)
Rating
Symbol
VDSS
VDGR
VGS
ID
IDM
PD
TJ, Tstg
IS
Max
20
20
±
12
3.0
48
Unit
Vdc
Vdc
Vdc
Adc
Drain–to–Source Voltage
Drain–to–Gate Voltage (RGS = 1.0 M
)
Gate–to–Source Voltage — Continuous
Drain Current — Continuous @ TA = 25
°
C (1)
Drain Current
— Pulsed
Total Power Dissipation @ TA = 25
°
C (1)
Operating and Storage Temperature Range
Continuous Source Current (Diode Conduction) (2)
1.0
Watts
°
C
Adc
– 55 to 150
1.25
THERMAL RESISTANCE
Rating
Symbol
R
θ
JA
Max
125
Unit
°
C/W
Thermal Resistance — Junction to Ambient (1)
(1) When mounted on 1 inch square FR–4 or G–10 board (VGS = 4.5 V, @ 10 Seconds)
(2) When mounted on FR–4 Board, t
≤
10 sec.
DEVICE MARKING
ORDERING INFORMATION
D1200Z
Device
Reel Size
13
″
Tape Width
12 mm embossed tape
Quantity
2000 units
MBDF1200ZEL
Designer’s Data for “Worst Case” Conditions
— The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Preferred devices
are Motorola recommended choices for future use and best overall value.
Designer’s, HDTMOS and EZFET are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc. Thermal Clad is a trade-
mark of the Bergquist Company.
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MBDF1200Z/D
DUAL TMOS
POWER MOSFET
3 AMPERES
20 VOLTS
RDS(on) = 38 m
CASE 948J–01
TSSOP–8
Motorola Preferred Device
Drain–1
Source–1
Source–1
Gate–1
1
2
3
4
8
7
6
5
Top View
Drain–2
Source–2
Source–2
Gate–2
D
S
G
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