- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄380465 > MBM29DL161TE-90TR (SPANSION LLC) FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT Dual Operation PDF資料下載
參數(shù)資料
| 型號(hào)： | MBM29DL161TE-90TR |
| 廠商： | SPANSION LLC |
| 元件分類(lèi)： | DRAM |
| 英文描述： | FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT Dual Operation |
| 中文描述： | 1M X 16 FLASH 3V PROM, 90 ns, PDSO48 |
| 封裝： | PLASTIC, REVERSE, TSOP1-48 |
| 文件頁(yè)數(shù)： | 1/76頁(yè) |
| 文件大小： | 363K |
| 代理商： | MBM29DL161TE-90TR |
當(dāng)前第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)第16頁(yè)第17頁(yè)第18頁(yè)第19頁(yè)第20頁(yè)第21頁(yè)第22頁(yè)第23頁(yè)第24頁(yè)第25頁(yè)第26頁(yè)第27頁(yè)第28頁(yè)第29頁(yè)第30頁(yè)第31頁(yè)第32頁(yè)第33頁(yè)第34頁(yè)第35頁(yè)第36頁(yè)第37頁(yè)第38頁(yè)第39頁(yè)第40頁(yè)第41頁(yè)第42頁(yè)第43頁(yè)第44頁(yè)第45頁(yè)第46頁(yè)第47頁(yè)第48頁(yè)第49頁(yè)第50頁(yè)第51頁(yè)第52頁(yè)第53頁(yè)第54頁(yè)第55頁(yè)第56頁(yè)第57頁(yè)第58頁(yè)第59頁(yè)第60頁(yè)第61頁(yè)第62頁(yè)第63頁(yè)第64頁(yè)第65頁(yè)第66頁(yè)第67頁(yè)第68頁(yè)第69頁(yè)第70頁(yè)第71頁(yè)第72頁(yè)第73頁(yè)第74頁(yè)第75頁(yè)第76頁(yè)
DS05-20880-4E
FUJITSU SEMICONDUCTOR
DATA SHEET
FLASH MEMORY
CMOS
16M (2M
×
8/1M
×
16) BIT
Dual Operation
MBM29DL16XTE/BE
70/90
I
FEATURES
0.23
μ
m Process Technology
Simultaneous Read/Write operations (dual bank)
Multiple devices available with different bank sizes
(Refer to “MBM29DL16XTE/BE Device Bank Divisions Table” in
I
GENERAL DESCRIPTION)
Host system can program or erase in one bank, then immediately and simultaneously read from the other bank
Zero latency between read and write operations
Read-while-erase
Read-while-program
(Continued)
I
PRODUCT LINE UP
I
PACKAGES
Part No.
MBM29DL16XTE/BE70
MBM29DL16XTE/BE90
Address Access Time (Max)
70 ns
90 ns
CE Access Time (Max)
70 ns
90 ns
OE Access Time (Max)
30 ns
35 ns
Power Supply Voltage
3.0 V
+
0.6 V
48-pin plastic TSOP (1)
(FPT-48P-M19)
48-pin plastic TSOP (1)
(FPT-48P-M20)
48-pin plastic FBGA
(BGA-48P-M11)
Marking Side
Marking Side
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MBM29DL162BE-70PBT | FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT Dual Operation |
| MBM29DL162BE-70TN | FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT Dual Operation |
| MBM29DL162BE-70TR | FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT Dual Operation |
| MBM29DL162BE-90PBT | FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT Dual Operation |
| MBM29DL162BE-90TN | FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT Dual Operation |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MBM29DL162BD | 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:16M (2M x 8/1M x 16) BIT Dual Operation |
| MBM29DL162BD-70PBT | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT Dual Operation |
| MBM29DL162BD-70PFTN | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT Dual Operation |
| MBM29DL162BD-70PFTR | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT Dual Operation |
| MBM29DL162BD-90PBT | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT Dual Operation |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。