- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄380467 > MBM29F004TC-70PFTN (SPANSION LLC) FLASH MEMORY CMOS 4 M (512 K X 8) BIT PDF資料下載
參數(shù)資料
| 型號： | MBM29F004TC-70PFTN |
| 廠商： | SPANSION LLC |
| 元件分類： | DRAM |
| 英文描述： | FLASH MEMORY CMOS 4 M (512 K X 8) BIT |
| 中文描述： | 512K X 8 FLASH 5V PROM, 70 ns, PDSO32 |
| 封裝： | PLASTIC, TSOP1-32 |
| 文件頁數(shù)： | 1/53頁 |
| 文件大小： | 288K |
| 代理商： | MBM29F004TC-70PFTN |
當前第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁第53頁
DS05-20876-3E
FUJITSU SEMICONDUCTOR
DATA SHEET
FLASH MEMORY
CMOS
4 M (512 K
×
8) BIT
MBM29F004TC/004BC-
70/
-
90
I
DESCRIPTION
The MBM29F004TC/BC is a 4 M-bit, 5.0 V-Only Flash memory organized as 512 K bytes of 8 bits each. The
MBM29F004TC/BC is offered in a 32-pin TSOP (1) and 32-pin QFJ (PLCC) packages. This device is designed
to be programmed in-system with the standard system 5.0 V V
CC
supply. A 12.0 V V
PP
is not required for write or
erase operations. The device can also be reprogrammed in standard EPROM programmers.
The standard MBM29F004TC/BC offers access times between 70 ns and 90 ns allowing operation of high-speed
microprocessors without wait states. To eliminate bus contention the device has separate chip enable (CE) , write
enable (WE) , and output enable (OE) controls.
The MBM29F004TC/BC is pin and command set compatible with JEDEC standard E
2
PROMs. Commands are
written to the command register using standard microprocessor write timings. Register contents serve as input
to an internal state-machine which controls the erase and programming circuitry. Write cycles also internally latch
addresses and data needed for the programming and erase operations. Reading data out of the device is similar
to reading from 12.0 V Flash or EPROM devices.
(Continued)
I
PRODUCT LINE UP
Part No.
MBM29F004TC/BC
-70
-90
Ambient Temperature (
°
C)
Max Address Access Time (ns)
20 to
+
70
70
40 to
+
85
90
V
CC
Supply Voltage
5.0 V
±
10
%
193
Voltage Consumption
(mW) (Max)
Operation
Erase/Program
275
TTL Standby mode
5.5
CMOS Standby mode
0.0275
Max CE Access (ns)
70
90
Max OE Access (ns)
30
35
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MBM29F004TC-70PFTR | FLASH MEMORY CMOS 4 M (512 K X 8) BIT |
| MBM29F004TC-90PD | FLASH MEMORY CMOS 4 M (512 K X 8) BIT |
| MBM29F004TC-90PFTN | FLASH MEMORY CMOS 4 M (512 K X 8) BIT |
| MBM29F004TC-90PFTR | FLASH MEMORY CMOS 4 M (512 K X 8) BIT |
| MBM29F080A-90PF | FLASH MEMORY CMOS 8M (1M x 8) BIT |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MBM29F004TC-70PFTR | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:FLASH MEMORY CMOS 4 M (512 K X 8) BIT |
| MBM29F004TC-90PD | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:FLASH MEMORY CMOS 4 M (512 K X 8) BIT |
| MBM29F004TC-90PFTN | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:FLASH MEMORY CMOS 4 M (512 K X 8) BIT |
| MBM29F004TC-90PFTR | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:FLASH MEMORY CMOS 4 M (512 K X 8) BIT |
| MBM29F016A | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:FLASH MEMORY CMOS 16M (2M x 8) BIT |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。