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參數(shù)資料
型號(hào): MBM29PL32BM10TN
廠商: SPANSION LLC
元件分類: DRAM
英文描述: FLASH MEMORY CMOS 32 M (4M X 8/2M X 16) BIT MirrorFlash
中文描述: 2M X 16 FLASH 3V PROM, 100 ns, PDSO48
封裝: PLASTIC, TSOP1-48
文件頁(yè)數(shù): 1/68頁(yè)
文件大小: 322K
代理商: MBM29PL32BM10TN
DS05-20907-3E
FUJITSU SEMICONDUCTOR
DATA SHEET
FLASH MEMORY
CMOS
32 M (4M
×
8/2M
×
16) BIT
MirrorFlash
TM
*
MBM29PL32TM/BM
90/10
I
DESCRIPTION
The MBM29PL32TM/BM is a 32M-bit, 3.0 V-only Flash memory organized as 4M bytes by 8 bits or 2M words by
16 bits. The MBM29PL32TM/BM is offered in 48-pin TSOP(1) and 48-ball FBGA. The device is designed to be
programmed in-system with the standard 3.0 V V
CC
supply. 12.0 V V
PP
and 5.0 V V
CC
are not required for write or
erase operations. The devices can also be reprogrammed in standard EPROM programmers.
(Continued)
I
PRODUCT LINE UP
I
PACKAGES
* :
MirrorFlash
TM
is a trademark of Fujitsu Limited.
Note
s
:
Programming in byte mode
(
×
8
) is prohibited.
Programming to the address that already contains data is prohibited
.
(It is mandatory to erase data prior to overprogram on the same address.)
Part No.
MBM29PL32TM/BM
90
10
V
CC
Max Address Access Time
Max CE Access Time
Max Page Read Access Time
3.0 V to 3.6 V
90 ns
90 ns
25 ns
3.0 V to 3.6 V
100 ns
100 ns
30 ns
48-pin plastic TSOP (1)
48-ball plastic FBGA
(FPT-48P-M19)
(BGA-48P-M20)
相關(guān)PDF資料
PDF描述
MBM29PL32BM90PBT FLASH MEMORY CMOS 32 M (4M X 8/2M X 16) BIT MirrorFlash
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MBM29PL32TM10PBT FLASH MEMORY CMOS 32 M (4M X 8/2M X 16) BIT MirrorFlash
MBM29PL32TM10TN FLASH MEMORY CMOS 32 M (4M X 8/2M X 16) BIT MirrorFlash
MBM29PL32TM90 FLASH MEMORY CMOS 32 M (4M X 8/2M X 16) BIT MirrorFlash
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