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參數(shù)資料
型號: MBM29SL800TD-12PW
廠商: SPANSION LLC
元件分類: DRAM
英文描述: FLASH MEMORY CMOS 8 M (1 M X 8/512 K X 16) BIT
中文描述: 512K X 16 FLASH 1.8V PROM, 120 ns, PBGA48
封裝: PLASTIC, SCSP-48
文件頁數(shù): 1/56頁
文件大?。?/td> 296K
代理商: MBM29SL800TD-12PW
DS05-20871-5E
FUJITSU SEMICONDUCTOR
DATA SHEET
FLASH MEMORY
CMOS
8 M (1 M
×
8/512 K
×
16) BIT
MBM29SL800TD/BD
-10/12
I
DESCRIPTION
The MBM29SL800TD/BD are a 8 M-bit, 1.8 V-only Flash memory organized as 1 Mbytes of 8 bits each or 512
Kwords of 16 bits each. The MBM29SL800TD/BD are offered in a 48-pin TSOP (I) , 48-ball FBGA and 48-ball
SCSP packages. These devices are designed to be programmed in-system with the standard system 3.0 V V
CC
supply. 12.0 V V
PP
and 5.0 V V
CC
are not required for write or erase operations. The devices can also be repro-
grammed in standard EPROM programmers.
(Continued)
I
PRODUCT LINE UP
I
PACKAGES
Part No.
MBM29SL800TD/MBM29SL800BD
10
100
Ordering Part No.
V
CC
=
+
2.0 V
±
0.2
12
120
Max Address Access Time (ns)
Max CE Access Time (ns)
100
120
Max OE Access Time (ns)
35
50
48-pin Plastic TSOP (I)
48-pin Plastic TSOP (I)
48-pin Plastic FBGA
48-pin Plastic SCSP
(FPT-48P-M19)
(FPT-48P-M20)
(BGA-48P-M12)
(WLP-48P-M03)
Marking Side
Marking Side
相關(guān)PDF資料
PDF描述
MBM29SL800BD-10PBT FLASH MEMORY CMOS 8 M (1 M X 8/512 K X 16) BIT
MBM29SL800BD-10PFTN FLASH MEMORY CMOS 8 M (1 M X 8/512 K X 16) BIT
MBM29SL800BD-10PFTR FLASH MEMORY CMOS 8 M (1 M X 8/512 K X 16) BIT
MBM29SL800BD-10PW FLASH MEMORY CMOS 8 M (1 M X 8/512 K X 16) BIT
MBM29SL800BD-12PBT FLASH MEMORY CMOS 8 M (1 M X 8/512 K X 16) BIT
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