- 您現在的位置：買賣IC網 > PDF目錄215911 > MBR10100-E3/45 (VISHAY SEMICONDUCTORS) 10 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AC PDF資料下載
參數資料
| 型號： | MBR10100-E3/45 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | 10 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AC |
| 封裝： | ROHS COMPLIANT, PLASTIC PACKAGE-2 |
| 文件頁數： | 1/5頁 |
| 文件大小： | 131K |
| 代理商： | MBR10100-E3/45 |
Vishay General Semiconductor
MBR(F,B)1090 & MBR(F,B)10100
Document Number: 88665
Revision: 03-Apr-07
www.vishay.com
1
High-Voltage Schottky Rectifier
FEATURES
Guardring for overvoltage protection
Lower power losses, high efficiency
Low forward voltage drop
High forward surge capability
High frequency operation
Meets MSL level 1, per J-STD-020C, LF max peak
of 245 °C (for TO-263AB package)
Solder Dip 260 °C, 40 seconds (for TO-220AC &
ITO-220AC package)
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in high frequency rectifier of switching mode
power
supplies,
free-wheeling
diodes,
dc-to-dc
converters or polarity protection application.
MECHANICAL DATA
Case: TO-220AC, ITO-220AC, TO-263AB
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAJOR RATINGS AND CHARACTERISTICS
IF(AV)
10 A
VRRM
90 V, 100 V
IFSM
150 A
VF
0.65 V
Tj max
150 °C
CASE
PIN 2
PIN 1
TO-220AC
MBR1090
MBR10100
MBRB1090
MBRB10100
PIN 1
PIN 2
K
HEATSINK
1
2
1
2
K
1
2
MBRF1090
MBRF10100
ITO-220AC
PIN 2
PIN 1
TO-263AB
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
MBR1090
MBR10100
UNIT
Maximum repetitive peak reverse voltage
VRRM
90
100
V
Working peak reverse voltage
VRWM
90
100
V
Maximum DC blocking voltage
VDC
90
100
V
Maximum average forward rectified current at TC = 133 °C
IF(AV)
10
A
Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load
IFSM
150
A
Peak repetitive reverse current at tp = 2 s, 1 kHz
IRRM
0.5
A
Voltage rate of change (rated VR)
dv/dt
10000
V/s
Operating junction and storage temperature range
TJ, TSTG
- 65 to + 150
°C
Isolation voltage (ITO-220AC only)
From terminal to heatsink t = 1 minute
VAC
1500
V
相關PDF資料 |
PDF描述 |
|---|---|
| MBRB1545CT-HE3/45 | 7.5 A, 45 V, SILICON, RECTIFIER DIODE, TO-263AB |
| MBRB20H45CT-HE3/45 | 10 A, 45 V, SILICON, RECTIFIER DIODE, TO-263AB |
| MBRB20H60CT-E3/81 | 10 A, 60 V, SILICON, RECTIFIER DIODE, TO-263AB |
| MBRB2550CT-E3/81 | 15 A, 50 V, SILICON, RECTIFIER DIODE, TO-263AB |
| MBRB30H45CT-HE3/45 | 15 A, 45 V, SILICON, RECTIFIER DIODE, TO-263AB |
相關代理商/技術參數 |
參數描述 |
|---|---|
| MBR10100-E34W | 制造商:KERSEMI 制造商全稱:Kersemi Electronic Co., Ltd. 功能描述:Trench MOS Schottky technology |
| MBR10100F | 制造商:ASEMI 制造商全稱:ASEMI 功能描述:MBR10100FDual High-Voltage Schottky Rectifiers |
| MBR10100FCT | 制造商:SIRECTIFIER 制造商全稱:Sirectifier Semiconductors 功能描述: |
| MBR10100G | 功能描述:肖特基二極管與整流器 10A 100V RoHS:否 制造商:Skyworks Solutions, Inc. 產品:Schottky Diodes 峰值反向電壓:2 V 正向連續電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
| MBR10100-M3/4W | 制造商:Vishay Semiconductors 功能描述:10A,100V,TRENCH SKY RECT. |
發布緊急采購，3分鐘左右您將得到回復。