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參數(shù)資料
| 型號(hào)： | MBR10200CT |
| 廠商： | LITE-ON SEMICONDUCTOR CORP |
| 元件分類： | 整流器 |
| 英文描述： | 10 A, 200 V, SILICON, RECTIFIER DIODE, TO-220AB |
| 封裝： | PLASTIC PACKAGE-3 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 78K |
| 代理商： | MBR10200CT |
MBR10150CT thru 10200CT
FEATURES
Metal of silicon rectifier,majority carrier conducton
Guard ring for transient protection
Low power loss, high efficiency
High current capability, low VF
High surge capacity
Plastic package has UL flammability classification
94V-0
MECHANICAL DATA
Case : TO-220AB molded plastic
Polarity : As marked on the body
Weight : 0.08 ounces, 2.24 grams
Mounting position : Any
Max. mounting torque = 0.5 N.m (5.1 Kgf.cm)
TO-220AB
All Dimensions in millimeter
TO-220AB
DIM.
MIN.
MAX.
A
C
D
E
F
G
H
B
14.22
15.88
10.67
9.65
2.54
3.43
6.86
5.84
8.26
9.28
-
6.35
12.70
14.73
0.51
2.79
N
M
L
K
J
I
1.14
2.29
0.64
0.30
3.53
4.09
3.56
4.83
1.14
1.40
2.92
2.03
PIN 1
PIN 3
PIN 2
CASE
A
B
C
K
J
I
H
G
F
E
D
N
M
L
H
PIN
1
3
2
SCHOTTKY BARRIER RECTIFIERS
REVERSE VOLTAGE - 150 to 200 Volts
FORWARD CURRENT - 10 Amperes
SEMICONDUCTOR
LITE-ON
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
℃
VRMS
VDC
VRRM
I(AV)
IFSM
Maximum Average Forward
Rectified Current (See Fig.1)
Peak Forward Surge Current
8.3ms single half sine-wave
superimposed on rated load
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
10
120
TJ
Operating Temperature Range
-65 to +175
TSTG
Storage Temperature Range
-65 to +175
Typical Thermal Resistance (Note 2)
R0JC
3.0
C/W
A
V
UNIT
V
CHARACTERISTICS
SYMBOL
VF
V
IR
Maximum DC Reverse Current
at Rated DC Blocking Voltage
@TJ =125 C
@TJ =25 C
8
2
uA
mA
TC =105 C
Maximum Forward
Voltage (Note 1)
IF=5A @
IF=10A @
TJ =125 C
TJ =25 C
TJ =125 C
TJ =25 C
MBR10150CT
150
105
150
Voltage Rate of Change (Rated VR)
dv/dt
10000
V/us
0.92
0.75
1.00
0.85
Typical Junction Capacitance
per element (Note 3)
CJ
300
NOTES : 1. 300us Pulse Width, 2% Duty Cycle.
2. Thermal Resistance Junction to Case.
3. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
pF
REV. 4, Oct-2010, KTHC21
MBR10200CT
200
140
200
℃
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MBR10200CT | 5 A, SILICON, RECTIFIER DIODE, TO-220AB |
| MBR10200CT-1 | 5 A, SILICON, RECTIFIER DIODE, TO-262AA |
| MBR20040CT | 100 A, 40 V, SILICON, RECTIFIER DIODE |
| MBR20150CT-1 | 10 A, SILICON, RECTIFIER DIODE, TO-262AA |
| MBR2080CT-006PBF | 10 A, 80 V, SILICON, RECTIFIER DIODE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MBR10200CT C0 | 制造商:SKMI/Taiwan 功能描述:Diode Schottky 200V 10A 3-Pin(3+Tab) TO-220AB Tube |
| MBR10200CT_B0_10001 | 制造商:PanJit Touch Screens 功能描述: |
| MBR10200CT_T0_10001 | 制造商:PanJit Touch Screens 功能描述: |
| MBR10200CTC0 | 制造商:Taiwan Semiconductor 功能描述:Schottky diode 200V, 10A, TO-220AB |
| MBR10200CT-G1 | 制造商:BCDSEMI 制造商全稱:BCD Semiconductor Manufacturing Limited 功能描述:HIGH VOLTAGE POWER SCHOTTKY RECTIFIER |
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