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參數(shù)資料
型號: MBR120LSFT3
廠商: ON SEMICONDUCTOR
元件分類: 參考電壓二極管
英文描述: Surface Mount Schottky Power Rectifier
中文描述: 1 A, 20 V, SILICON, SIGNAL DIODE
封裝: PLASTIC, CASE 498, 2 PIN
文件頁數(shù): 1/6頁
文件大小: 47K
代理商: MBR120LSFT3
Semiconductor Components Industries, LLC, 2003
February, 2003 - Rev. 1
1
Publication Order Number:
MBR120VLSFT1/D
MBR120VLSFT1
Surface Mount
Schottky Power Rectifier
Plastic SOD-123 Package
. . . using the Schottky Barrier principle with a large area
metal-to-silicon power diode. Ideally suited for low voltage, high
frequency rectification or as free wheeling and polarity protection
diodes in surface mount applications where compact size and weight
are critical to the system. This package also provides an easy to work
with alternative to leadless 34 package style. Because of its small size,
it is ideal for use in portable and battery powered products such as
cellular and cordless phones, chargers, notebook computers, printers,
PDAs and PCMCIA cards. Typical applications are ac/dc and dc-dc
converters, reverse battery protection, and “Oring” of multiple supply
voltages and any other application where performance and size are
critical. These state-of-the-art devices have the following features:
Guardring for Stress Protection
Optimized for Very Low Forward Voltage
125
°
C Operating Junction Temperature
Epoxy Meets UL94, VO at 1/8
Package Designed for Optimal Automated Board Assembly
ESD Ratings: Machine Model, C;
ESD Ratings:
Human Body Model, 3B
Mechanical Characteristics
Reel Options: MBR120VLSFT1 = 3,000 per 7
reel/8 mm tape
Reel Options:
MBR120VLSFT3 = 10,000 per 13
reel/8 mm tape
Device Marking: L2V
Polarity Designator: Cathode Band
Weight: 11.7 mg (approximately)
Case: Epoxy, Molded
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead and Mounting Surface Temperature for Soldering Purposes:
260
°
C Max. for 10 Seconds
Device Meets MSL 1 Requirements
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
20
V
Average Rectified Forward Current
(Rated V
R
) T
L
= 119
°
C
I
F(AV)
1.0
A
Non-Repetitive Peak Surge Current
(Surge Applied at Rated Load Condi-
tions, Halfwave, Single Phase, 60 Hz)
I
FSM
45
A
Storage Temperature Range
T
stg
-65 to +125
°
C
Operating Junction Temperature
T
J
-65 to +125
°
C
Voltage Rate of Change (Rated V
R
)
dv/dt
1000
V/ s
Device
Package
Shipping
ORDERING INFORMATION
MBR120VLSFT1 SOD-123FL
SOD-123FL
CASE 498
PLASTIC
3000/Tape & Reel
SCHOTTKY BARRIER
RECTIFIER
1.0 AMPERES
20 VOLTS
MBR120VLSFT3 SOD-123FL
10,000/Tape &
Reel
DEVICE MARKING
L2VD
L2V = Specific Device Code
D
= Date Code
http://onsemi.com
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相關代理商/技術參數(shù)
參數(shù)描述
MBR120LSFT3G 功能描述:肖特基二極管與整流器 1A 20V RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel
MBR120VLSFT1 功能描述:肖特基二極管與整流器 1A 20V RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel
MBR120VLSFT1_05 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Surface Mount Schottky Power Rectifier
MBR120VLSFT1G 功能描述:肖特基二極管與整流器 1A 20V RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel
MBR120VLSFT1H 制造商:Rochester Electronics LLC 功能描述: 制造商:ON Semiconductor 功能描述:
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