- 您現在的位置：買賣IC網 > PDF目錄299470 > MBR1560CT 15 A, 60 V, SILICON, RECTIFIER DIODE, TO-220AB PDF資料下載
參數資料
| 型號： | MBR1560CT |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | 15 A, 60 V, SILICON, RECTIFIER DIODE, TO-220AB |
| 封裝： | LEAD FREE, PLASTIC PACKAGE-3 |
| 文件頁數： | 1/3頁 |
| 文件大小： | 265K |
| 代理商： | MBR1560CT |
Voltage
45 to 150 V
Current
15.0 A
Jul - 09
MBR1545CT ....... MBR15150CT
15.0 Amp. Schottky Barrier Rectifier
Common Cathode
Suffix "C"
TO-220AB
1
3
2
High surge capability
For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications
Low power loss, high efficiency.
Cases: JEDEC TO-220AB molded plastic body
Terminals: Pure tin plated, lead free, solderable per
MIL-STD-750, Method 2026
Mounting position: Any
Weight: 2.24 grams
Mechanical Data
High temperature soldering guaranteed:
260°C/10 seconds, 6.35mm from case
Plastic material used carries Underwriters
Laboratory Classifications 94V-0
High current capability, low forward voltage drop
Polarity: As marked
Mounting torque: 5 in. - lbs. max
Metal silicon junction, majority carrier conduction
Guardring for overvoltage protection
Maximum Recurrent Peak Reverse Voltage (V)
Maximum RMS Voltage (V)
Maximum DC blocking voltage (V)
Maximum Average Forward Rectified Current
at TC = 105 °C
VRRM
VRMS
VDC
IF (AV)
Tj
Tstg
Operating Junction Temperature Range
Storage Temperature Range
– 65 to + 175 °C
IFSM
15 A
150 A
– 65 to + 150 °C
IRRM
Absolute Maximum Ratings, according to IEC publication No. 134
Electrical Characteristics
MBR
1545CT
45
31
MBR
1560CT
60
42
MBR
15100CT
100
70
MBR
15150CT
150
105
Peak Forward Surge Current, 8.3 ms Single Half
Sine-wave Superimposed on Rated Load (JEDEC Method)
Peak Repetitive Reverse Surge Current (Note 1)
0.5 A
1.0 A
VF
IR
Rthj-a
Rthj-c
Maximum Typical Thermal Resistance (Note 3)
0.57 V
10 °C/W
1.5 °C/W
Maximum Instantaneous Forward Voltage at
(Note 2)
IF = 7.5 A, Tc = 25 °C
IF = 7.5 A, Tc = 125 °C
IF = 15 A, Tc = 25 °C
IF = 15 A, Tc = 125 °C
7.5 mA
0.84 V
0.72 V
-
0.92 V
0.82 V
-
1.05 V
0.92 V
-
0.75 V
0.65 V
-
Max. Instantaneous Reverse Current
@ TC=25°C
at Rated DC Blocking Voltage (Note 2) @ TC=125°C
10 mA
0.1 mA
5.0 mA
0.5 mA
MBR
1545CT
MBR
1560CT
MBR
15100CT
MBR
15150CT
Cj
Typical Junction Capacitance
200 pF
400 pF
0.3 mA
Notes:
1. 2.0s Pulse Width, f=1.0 KHz
2. Pulse Test: 300s Pulse Width, 1% Duty Cycle
3. Mount on Heatsink Size of 50.4 mm x 76.2 mm x 6.35 mm Al-Plate.
相關PDF資料 |
PDF描述 |
|---|---|
| MBR20080 | 180 A, 80 V, SILICON, RECTIFIER DIODE |
| HS18390 | 180 A, 90 V, SILICON, RECTIFIER DIODE |
| MBR20150PT | 20 A, 150 V, SILICON, RECTIFIER DIODE, TO-247AD |
| MBR2080CT | 10 A, 80 V, SILICON, RECTIFIER DIODE, TO-220AB |
| MBR2090CT | 10 A, 90 V, SILICON, RECTIFIER DIODE, TO-220AB |
相關代理商/技術參數 |
參數描述 |
|---|---|
| MBR1560CT C0 | 制造商:SKMI/Taiwan 功能描述:Diode Schottky 60V 15A 3-Pin(3+Tab) TO-220AB Tube 制造商:Taiwan Semiconductor 功能描述:Diode Schottky 60V 15A 3-Pin(3+Tab) TO-220AB Tube |
| MBR1560CT | 制造商:Fairchild Semiconductor Corporation 功能描述:Schottky Rectifier |
| MBR1560CT/45 | 功能描述:肖特基二極管與整流器 15 Amp 60 Volt RoHS:否 制造商:Skyworks Solutions, Inc. 產品:Schottky Diodes 峰值反向電壓:2 V 正向連續電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
| MBR1560CT_Q | 功能描述:肖特基二極管與整流器 18 amp Rectifier Schottky Barrier RoHS:否 制造商:Skyworks Solutions, Inc. 產品:Schottky Diodes 峰值反向電壓:2 V 正向連續電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
| MBR1560CT2 | 制造商:SAMSUNG 功能描述:* |
發布緊急采購，3分鐘左右您將得到回復。