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參數資料
| 型號： | MBR30H45CT-E3/45 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 整流器 |
| 英文描述： | 15 A, 45 V, SILICON, RECTIFIER DIODE, TO-220AB |
| 封裝： | ROHS COMPLIANT, PLASTIC PACKAGE-3 |
| 文件頁數： | 1/5頁 |
| 文件大?。?/td> | 147K |
| 代理商： | MBR30H45CT-E3/45 |
New Product
MBR(F,B)30H35CT thru MBR(F,B)30H60CT
Vishay General Semiconductor
Document Number: 88866
Revision: 31-Jul-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
Dual Common-Cathode Schottky Rectifier
High Barrier Technology for Improved High Temperature Performance
FEATURES
Guardring for overvoltage protection
Lower power losses, high efficiency
Low forward voltage drop
Low leakage current
High forward surge capability
High frequency operation
Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
Solder dip 260 °C, 40 s (for TO-220AB and
ITO-220AB package)
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in low voltage, high frequency rectifier of
switching mode power supplies, freewheeling diodes,
dc-to-dc converters or polarity protection application.
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, TO-263AB
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test, HE3 suffix for high reliability grade
(AEC-Q101 qualified), meets JESD 201 class 2
whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
PRIMARY CHARACTERISTICS
IF(AV)
2 x 15 A
VRRM
35 V to 60 V
IFSM
150 A
VF
0.56 V, 0.59 V
IR
80 A, 60 A
TJ max.
175 °C
PIN 2
PIN 1
PIN 3
CASE
PIN 2
PIN 1
PIN 3
TO-220AB
MBR30HxxCT
ITO-220AB
MBRB30HxxCT
PIN 1
PIN 2
K
HEATSINK
1
2
3
1
2
K
MBRF30HxxCT
TO-263AB
1
2
3
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
MBR30H35CT MBR30H45CT MBR30H50CT MBR30H60CT
UNIT
Maximum repetitive peak reverse voltage
VRRM
35
45
50
60
V
Working peak reverse voltage
VRWM
35
45
50
60
V
Maximum DC blocking voltage
VDC
35
45
50
60
V
Max. average forward rectified
current (Fig. 1)
total device
per diode
IF(AV)
30
15
A
Non-repetitive avalanche energy per diode
at 25 °C, IAS = 4 A, L = 10 mH
EAS
80
mJ
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load per diode
IFSM
150
A
Peak repetitive reverse surge current per diode
at tp = 2.0 s, 1 kHz
IRRM
1.0
0.5
A
Peak non-repetitive reverse energy
(8/20 s waveform)
ERSM
25
20
mJ
相關PDF資料 |
PDF描述 |
|---|---|
| MBRB20H60CT-HE3/81 | 10 A, 60 V, SILICON, RECTIFIER DIODE, TO-263AB |
| MBRB25H35CT-E3/81 | 15 A, 35 V, SILICON, RECTIFIER DIODE, TO-263AB |
| MBRB3035CT-E3/45 | 15 A, 35 V, SILICON, RECTIFIER DIODE, TO-263AB |
| MBRF20100CT-E3/45 | 10 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB |
| MBRF30H35CT-HE3/45 | 15 A, 35 V, SILICON, RECTIFIER DIODE, TO-220AB |
相關代理商/技術參數 |
參數描述 |
|---|---|
| MBR30H45CTHE3/45 | 功能描述:肖特基二極管與整流器 45 Volt 30A Dual Common-Cathode RoHS:否 制造商:Skyworks Solutions, Inc. 產品:Schottky Diodes 峰值反向電壓:2 V 正向連續電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
| MBR30H45PT | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Dual Common-Cathode Schottky Rectifier |
| MBR30H45PT-E3/45 | 功能描述:肖特基二極管與整流器 45 Volt 30A Dual Common-Cathode RoHS:否 制造商:Skyworks Solutions, Inc. 產品:Schottky Diodes 峰值反向電壓:2 V 正向連續電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
| MBR30H50CT | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Dual Common-Cathode Schottky Rectifier |
| MBR30H50CT/45 | 功能描述:肖特基二極管與整流器 50 Volt 30A Dual Common-Cathode RoHS:否 制造商:Skyworks Solutions, Inc. 產品:Schottky Diodes 峰值反向電壓:2 V 正向連續電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
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