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參數資料
| 型號： | MBR360G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Axial Lead Rectifiers |
| 中文描述： | 3 A, 60 V, SILICON, RECTIFIER DIODE, DO-201AD |
| 封裝： | LEAD FREE, PLASTIC, CASE 267-05, 2 PIN |
| 文件頁數： | 1/4頁 |
| 文件大?。?/td> | 67K |
| 代理商： | MBR360G |
Semiconductor Components Industries, LLC, 2006
June, 2006 Rev. 6
1
Publication Order Number:
MBR350/D
MBR350, MBR360
MBR360 is a Preferred Device
Axial Lead Rectifiers
These devices employ the Schottky Barrier principle in a large area
metaltosilicon power diode. Stateoftheart geometry features
epitaxial construction with oxide passivation and metal overlap
contact. Ideally suited for use as rectifiers in lowvoltage,
highfrequency inverters, free wheeling diodes, and polarity
protection diodes.
Features
Extremely Low v
F
Low Power Loss/High Efficiency
Highly Stable Oxide Passivated Junction
Low Stored Charge, Majority Carrier Conduction
PbFree Packages are Available*
Mechanical Characteristics:
Case: Epoxy, Molded
Weight: 1.1 Gram (Approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead Temperature for Soldering Purposes:
260
°
C Max. for 10 Seconds
Polarity: Cathode indicated by Polarity Band
MAXIMUM RATINGS
Rating
Symbol
Max
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
MBR350
MBR360
V
RRM
V
RWM
V
R
50
60
3.0
V
Average Rectified Forward Current T
A
= 65
°
C
(R
JA
= 28
°
C/W, P.C. Board Mounting)
NonRepetitive Peak Surge Current (Note 1)
(Surge Applied at Rated Load Conditions
Halfwave, Single Phase, 60 Hz, T
L
= 75
°
C)
Operating and Storage Junction Temperature
Range (Reverse Voltage Applied)
I
O
A
I
FSM
80
A
T
J
, T
stg
65 to
+150
°
C
THERMAL CHARACTERISTICS
Thermal Resistance, JunctiontoAmbient
(see Note 4 Mounting Data, Mounting Method 3)
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Lead Temperature reference is cathode lead 1/32 in from case.
R
JA
28
°
C/W
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
AXIAL LEAD
CASE 26705
(DO201AD)
STYLE 1
SCHOTTKY BARRIER
RECTIFIERS
3.0 AMPERES
50, 60 VOLTS
Preferred
devices are recommended choices for future use
and best overall value.
MARKING DIAGRAM
A
MBR
3x0
A
x
= Assembly Location
= 5 or 6
= PbFree Package
(Note: Microdot may be in either location)
http://onsemi.com
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
ORDERING INFORMATION
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| MBR40H100WD | SWITCHMODE⑩ Power Rectifier 100 V, 40 A |
| MBR40H100WT | SWITCHMODE Power Rectifier100 V, 40 A |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| MBR360-M3 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Schottky Rectifier, 3 A |
| MBR360RL | 功能描述:肖特基二極管與整流器 3A 60V RoHS:否 制造商:Skyworks Solutions, Inc. 產品:Schottky Diodes 峰值反向電壓:2 V 正向連續電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
| MBR360RLG | 功能描述:肖特基二極管與整流器 3A 60V RoHS:否 制造商:Skyworks Solutions, Inc. 產品:Schottky Diodes 峰值反向電壓:2 V 正向連續電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
| MBR360RLG | 制造商:ON Semiconductor 功能描述:Schottky Rectifier 制造商:ON Semiconductor 功能描述:SCHOTTKY RECTIFIER, 3A 60V DO-201AD |
| MBR360T3 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:Surface Mount Schottky Power Rectifier |
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