- 您現在的位置：買賣IC網 > PDF目錄30871 > MBR40H45CT-E3 (VISHAY SEMICONDUCTORS) 20 A, 45 V, SILICON, RECTIFIER DIODE, TO-220AB PDF資料下載
參數資料
| 型號： | MBR40H45CT-E3 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 整流器 |
| 英文描述： | 20 A, 45 V, SILICON, RECTIFIER DIODE, TO-220AB |
| 封裝： | PLASTIC PACKAGE-3 |
| 文件頁數： | 1/4頁 |
| 文件大小： | 75K |
| 代理商： | MBR40H45CT-E3 |
MBR40H35CT thru MBR40H60CT
Vishay Semiconductors
formerly General Semiconductor
New Product
Document Number 88920
www.vishay.com
14-Jul-04
1
Dual Schottky Barrier Rectifiers
Reverse Voltage 35V to 60V
Forward Current 40A
Max. Junction Temperature 175
°C
TO-220AB (MBR40HxxCT)
0.398 (10.10)
0.382 (8.70)
0.523 (13.28)
0.507 (12.88)
0.185 (4.70)
0.169 (4.30)
0.024 (0.60)
0.018 (0.45)
0.114 (2.90)
0.106 (2.70)
0.634 (16.10)
0.618 (15.70)
0.055 (1.40)
0.047 (1.20)
0.154 (3.90)
0.138 (3.50)
0.150 (3.80)
0.139 (3.54)
0.118
(3.00) Typ.
0.067
(1.70) Typ.
0.100
(2.54) Typ.
0.331 (8.40) Typ.
0.343 (8.70) Typ.
0.200 (5.08) Typ.
0.056 (1.42)
0.064 (1.62)
0.028 (0.70)
0.035 (0.90)
0.055 (1.40)
0.049 (1.25)
0.102 (2.60)
0.087 (2.20)
1.161 (29.48)
1.105 (28.08)
0.638 (16.20)
0.598 (15.20)
Dia.
0.370 (9.40)
0.354 (9.00)
12
3
PIN
CASE
PIN 2
PIN 1
PIN 3
Features
Dual rectifier construction, positive center tap
Metal silicon junction, majority carrier conduction
Low power loss, high efficiency
Guardring for overvoltage protection
For use in high frequency inverters,
free wheeling, and polarity protection applications
Mechanical Data
Case: JEDEC TO-220AB molded plastic body
Terminals: Plated leads, solderable per
MIL-STD-750, Method 2026
High temperature soldering guaranteed:
250°C/10 seconds, 0.25" (6.35mm) from case
Polarity: As marked
Mounting Position: Any
Mounting Torque: 10 in-lbs maximum
Weight: 0.08oz., 2.24g
Epoxy meets UL 94V-0 flammability rating
Dimensions in inches
and (millimeters)
Maximum Ratings (TC = 25°C unless otherwise noted)
MBR40H MBR40H MBR40H MBR40H
Parameter
Symbol
35CT
45CT
50CT
60CT
Unit
Maximum repetitive peak reverse voltage
VRRM
35
45
50
60
V
Working peak reverse voltage
VRWM
35
45
50
60
V
Maximum DC blocking voltage
VDC
35
45
50
60
V
Maximum average forward rectified current
Total device
40
(see fig. 1)
Per leg
IF(AV)
20
A
Peak forward surge current
8.3ms single half sine-wave superimposed
IFSM
350
320
A
on rated load
Per leg
Peak repetitive reverse current per leg at tp = 2
s, 1KHZ
IRRM
1.0
A
Peak non-repetitive reverse surge energy
ERSM
20
mJ
(8/20
s waveform)
Per leg
Non-repetitive avalanche energy
at 25
°C, IAS = 3.0A, L=5mH
Per leg
EAS
22.5
mJ
Voltage rate of change (rated VR)
dv/dt
10,000
V/
s
Operating junction and storage temperature range
TJ, TSTG
–65 to +175
°C
相關PDF資料 |
PDF描述 |
|---|---|
| MBR6040PT | 40 A, 40 V, SILICON, RECTIFIER DIODE |
| MBR6020PT | 40 A, 20 V, SILICON, RECTIFIER DIODE |
| MBR6080PT | 40 A, 80 V, SILICON, RECTIFIER DIODE |
| MBR7100 | 7.5 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AC |
| MBRB10H100-45 | 10 A, 100 V, SILICON, RECTIFIER DIODE, TO-263AB |
相關代理商/技術參數 |
參數描述 |
|---|---|
| MBR40H45CT-E3/45 | 功能描述:肖特基二極管與整流器 45 Volt 40A Dual Common-Cathode RoHS:否 制造商:Skyworks Solutions, Inc. 產品:Schottky Diodes 峰值反向電壓:2 V 正向連續電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
| MBR40H45PT | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Dual Schottky Barrier Rectifier |
| MBR40H45PT-E3/45 | 功能描述:肖特基二極管與整流器 45 Volt 40A Dual Common-Cathode RoHS:否 制造商:Skyworks Solutions, Inc. 產品:Schottky Diodes 峰值反向電壓:2 V 正向連續電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
| MBR40H50CT | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Dual Schottky Barrier Rectifiers |
| MBR40H50CT-E3/45 | 功能描述:肖特基二極管與整流器 50 Volt 40A Dual Common-Cathode RoHS:否 制造商:Skyworks Solutions, Inc. 產品:Schottky Diodes 峰值反向電壓:2 V 正向連續電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
發布緊急采購，3分鐘左右您將得到回復。