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參數資料
| 型號： | MBR4O50PT |
| 廠商： | DIODES INC |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | 40A SCHOTTKY BARRIER RECTIFIER |
| 中文描述： | RECTIFIER DIODE |
| 封裝： | PLASTIC, TO-3P, 3 PIN |
| 文件頁數： | 1/2頁 |
| 文件大小： | 89K |
| 代理商： | MBR4O50PT |
D
S
23019 Rev. E-2
1 of 2
MBR4030PT - MBR4060PT
MBR4030PT - MBR4060PT
40A SCHOTTKY BARRIER RECTIFIER
Features
Schottky Barrier Chip
Guard Ring Die Construction for
Transient Protection
Low Power Loss, High Efficiency
High Surge Capability
High Current Capability and Low Forward
Voltage Drop
For Use in Low Voltage, High Frequency
Inverters, Free Wheeling, and Polarity
Protection Applications
Plastic Material: UL Flammability
Classification Rating 94V-0
A
B
E
G
J
L
M
N
K
S
M
H
R
D
C
Q
P*
*2 Places
TO-3P
Min
Dim
A
B
C
D
E
G
H
J
K
L
M
N
P
Q
R
S
All Dimensions in mm
Max
3.20
3.50
4.59
5.16
20.80
21.30
19.70
20.20
2.10
2.40
0.51
0.76
15.90
16.40
1.70
2.70
3.10
3.30
3.50
4.51
5.20
5.70
1.12
1.22
1.93
2.18
2.97
3.22
11.70
12.80
4.30 Typical
Maximum Ratings and Electrical Characteristics
@ T
A
= 25 C unless otherwise specified
Mechanical Data
Case: Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: As Marked on Body
Marking: Type Number
Weight: 5.6 grams (approx.)
Mounting Position: Any
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Symbol
MBR
4030PT
MBR
4035PT
MBR
4040PT
MBR
4045PT
MBR
4O50PT
MBR
4060PT
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
V
RRM
V
RWM
V
R
V
R(RMS)
30
35
40
45
50
60
V
21
24.5
28
31.5
35
42
V
@ T
C
= 125 C
(Note 1)
I
O
40
A
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on rated load
(JEDEC Method)
Forward Voltage Drop
I
FSM
400
A
@ I
F
= 20A, T
C
= 25 C
@ I
F
= 20A, T
C
= 125 C
@ T
C
= 25 C
@ T
C
= 125 C
V
FM
0.70
0.60
0.80
0.70
V
Peak Reverse Current
at Rated DC Blocking Voltage
Typical Junction Capacitance
Typical Thermal Resistance Junction to Case
Voltage Rate of Change (Rated V
R
)
Operating and Storage Temperature Range
I
RM
1.0
100
1100
1.4
10,000
-65 to +150
mA
(Note 2)
(Note 1)
C
j
pF
K/W
V/ s
C
R
Jc
dV/dt
T
j,
T
STG
Notes:
1. Thermal resistance junction to case mounted on heatsink.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
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