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參數資料
型號: MBR5025L
廠商: ON SEMICONDUCTOR
元件分類: 整流器
英文描述: 50 A, 25 V, SILICON, RECTIFIER DIODE, TO-218
封裝: PLASTIC, CASE 340E-02, 4 PIN
文件頁數: 1/4頁
文件大小: 40K
代理商: MBR5025L
Semiconductor Components Industries, LLC, 2000
October, 2000 – Rev. 3
1
Publication Order Number:
MBR5025L/D
MBR5025L
Preferred Device
SWITCHMODE
Power Rectifier
The SWITCHMODE power rectifier employs the use of the
Schottky Barrier principle with a Platinum barrier metal. This
state-of-the-art device has the following features:
Very Low Forward Voltage Drop (Max 0.58 V @ 100°C)
Guardring for Stress Protection and High dv/dt Capability
(> 10 V/ns)
150°C Operating Junction Temperature
Specially Designed for SWITCHMODE Power Supplies with
Operating Frequency up to 300 kHz
Mechanical Characteristics
Case: Epoxy, Molded
Weight: 4.3 grams (approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead Temperature for Soldering Purposes:
260
°C Max. for 10 Seconds
Shipped 30 Units Per Plastic Tube
Marking: B5025L
MAXIMUM RATINGS
Rating
Symbol
Max
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
25
V
Average Rectified Forward Current
TC = 125°C
IF(AV)
50
A
Peak Repetitive Forward Current,
(Rated VR, Square Wave, 20 kHz
@ TC = 90°C) Per Diode
IFRM
150
A
Non–Repetitive Peak Surge Current
(Surge Applied at Rated Load
Conditions Halfwave, Single
Phase, 60 Hz)
IFSM
300
A
Peak Repetitive Reverse Current
(2.0
ms, 1.0 kHz)
IRRM
2.0
A
Storage Temperature Range
Tstg
–65 to +175
°C
Operating Junction Temperature
TJ
–65 to +150
°C
Peak Surge Junction Temperature
(Forward Current Applied)
TJ(pk)
175
°C
Voltage Rate of Change
dv/dt
10,000
V/
ms
Device
Package
Shipping
ORDERING INFORMATION
MBR5025L
TO–218
http://onsemi.com
TO–218
CASE 340E
STYLE 1
30 Units/Rail
4
1
SCHOTTKY BARRIER
RECTIFIER
LOW VF
50 AMPERES
25 VOLTS
3
1, 4
3
Preferred devices are recommended choices for future use
and best overall value.
MARKING DIAGRAM
B5025L
B5025L = Device Code
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