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參數資料
| 型號： | MBR6050PT |
| 廠商： | Taiwan Semiconductor Co., Ltd. |
| 英文描述： | 60.0 AMPS. Schottky Barrier Rectifiers |
| 中文描述： | 60.0安培。肖特基 |
| 文件頁數： | 1/2頁 |
| 文件大?。?/td> | 99K |
| 代理商： | MBR6050PT |
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MBR6050PT
THRU
MBR60100PT
60.0 AMPS. Schottky Barrier Rectifiers
Voltage Range
50 to 100 Volts
Current
60.0 Amperes
TO-3P/TO-247AD
Features
Plastic material used carries Underwriters Laboratory
Classifications 94V-0
Metal silicon rectifier, majority carrier conduction
Low power loss, high efficiency
High current capability, low forward voltage drop
High surge capability
For use in low voltage, high frequency inverters, free wheeling,
and polarity protection applications
Guardring for overvoltage protection
High temperature soldering guaranteed:
260
o
C/10 seconds,0.17”(4.3mm)from case
Mechanical Data
Cases: JEDEC TO-3P/TO-247AD molded plastic body
Terminals: Leads solderable per MIL-STD-750, Method 2026
Polarity: As marked
Mounting position: Any
Mounting torque: 10 in. - lbs. max
Weight: 0.2 ounce, 5.6 grams
Maximum Ratings and Electrical Characteristics
Rating at 25
ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
at Tc=125
C
Peak Repetitive Forward Current (Rated V
R
, Square
Wave, 20KHz) at Tc=120
C
Peak Forward Surge Current, 8.3 ms Single Half
Sine-wave Superimposed on Rated Load (JEDEC
method )
Peak Repetitive Reverse Surge Current (Note 1)
Maximum Instantaneous Forward Voltage at (Note 2)
I
F
=30A, Tc=25
C
I
F
=30A, Tc=125
O
C
Maximum Instantaneous Reverse Current @Tc=25
at
R
ated
DC
Blocking
V
oltage
P
er
L
eg @ Tc=125
(Note 1)
Voltage Rate of Change at (Rated V
R
)
Typical Thermal Resistance Per Leg (Note 3)
Dimensions in inches and (millimeters)
Symbol
MBR6050PT MBR6060PT MBR60100PT
Units
V
RRM
50
60
V
RMS
35
42
V
DC
50
60
I
(AV)
100
70
100
V
V
V
60
A
I
FRM
60.0
A
I
FSM
500
A
I
RRM
V
F
1.0
0.72
0.62
1.0
100.0
A
V
I
R
mA
mA
dV/dt
R
T
J
T
STG
1,000
1.2
V/uS
/W
JC
Operating Junction Temperature Range
Storage Temperature Range
Notes: 1. 2.0us Pulse Width, f=1.0 KHz
2. Pulse Test: 300us Pulse Width, 1% Duty Cycle
3. Thermal Resistance from Junction to Case Per Leg
-65 to +150
-65 to +175
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相關代理商/技術參數 |
參數描述 |
|---|---|
| MBR6050PTE3/TU | 制造商:Microsemi Corporation 功能描述:60A, 50V, VF=0.79V, TJMAX = 175C - Bulk 制造商:Microsemi Corporation 功能描述:DIODE SCHOTTKY 60A 50V TO-247AD |
| MBR6050PT-G | 制造商:COMCHIP 制造商全稱:Comchip Technology 功能描述:Schottky Barrier Rectifier |
| MBR6060 | 功能描述:肖特基二極管與整流器 60V - 60A Schottky Rectifier RoHS:否 制造商:Skyworks Solutions, Inc. 產品:Schottky Diodes 峰值反向電壓:2 V 正向連續電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
| MBR6060CT | 功能描述:DIODE ARRAY SCHOTTKY 60V TO220AB 制造商:smc diode solutions 系列:- 包裝:管件 零件狀態:有效 二極管配置:1 對共陰極 二極管類型:肖特基 電壓 - DC 反向（Vr）（最大值）:60V 電流 - 平均整流（Io）（每二極管）:- 不同 If 時的電壓 - 正向（Vf）:780mV @ 30A 速度:快速恢復 = 200mA（Io） 反向恢復時間（trr）:- 不同?Vr 時的電流 - 反向漏電流:5mA @ 60V 安裝類型:通孔 封裝/外殼:TO-220-3 供應商器件封裝:TO-220AB 標準包裝:50 |
| MBR6060PT | 功能描述:肖特基二極管與整流器 60A 60V RoHS:否 制造商:Skyworks Solutions, Inc. 產品:Schottky Diodes 峰值反向電壓:2 V 正向連續電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
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