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參數資料
| 型號： | MBR735 |
| 廠商： | GE Security, Inc. |
| 英文描述： | Schottky Rectifier(肖特基整流器) |
| 中文描述： | 肖特基整流器（肖特基整流器） |
| 文件頁數： | 1/2頁 |
| 文件大?。?/td> | 75K |
| 代理商： | MBR735 |
MBR735 THRU MBR760
SCHOTTKY RECTIFIER
Reverse Voltage -
35 to 60 Volts
Forward Current -
7.5 Amperes
FEATURES
Plastic package has Underwriters Laboratory
Flammability Classifications 94V-0
Metal to silicon rectifier,
majority carrier conduction
Low power loss, high efficiency
High current capability, low forward
voltage drop
High surge capability
For use in low voltage, high frequency inverters, free
wheeling, and polarity protection applications
Guardring for overvoltage protection
High temperature soldering guaranteed:
250°C/10 seconds, 0.25" (6.35mm) from case
MECHANICAL DATA
Case:
JEDEC TO-220AC molded plastic body
Terminals:
Lead solderable per MIL-STD-750,
Method 2026
Polarity:
As marked
Mounting Position:
Any
Mounting Torque:
5 in. - lbs. max.
Weight:
0.08 ounces, 2.24 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
SYMBOLS
MBR735
MBR745
MBR750
MBR760
UNITS
Maximum repetitive peak reverse voltage
Maximum working peak reverse voltage
Maximum DC blocking voltage
Maximum average forward rectified current
(SEE FIG 1)
Peak repetitive forward current (square wave, 20 KH
Z
)
at T
C
=105°C
Peak forward surge current, 8.3ms single half sine-
wave superimposed on rated load (JEDEC Method)
Peak repetitive reverse surge current
(NOTE 1)
Maximum instantaneous
forward voltage at
(NOTE 2)
V
RRM
V
RWM
V
DC
I
(AV)
35
35
35
45
45
45
50
50
50
60
60
60
Volts
Volts
Volts
Amps
7.5
I
FRM
15.0
Amps
I
FSM
150.0
Amps
I
RRM
1.0
-
0.57
0.84
0.72
0.5
0.75
0.65
-
-
Amps
I
F
=7.5A, T
C
=25°C
I
F
=7.5A, T
C
=125°C
I
F
=15A, T
C
=25°C
I
F
=15A, T
C
=125°C
V
F
Volts
Maximum instantaneous reverse current at
rated DC blocking voltage
(NOTE 1)
Voltage rate of change (rated V
R
)
Maximum thermal resistance,
(NOTE 3)
T
C
=25°C
T
C
=125°C
I
R
0.1
15.0
0.5
50
mA
dv/dt
R
Θ
JC
R
Θ
JA
T
J
T
STG
10,000
3.0
60.0
-65 to +150
-65 to +175
V/
μ
s
°C/W
Operating junction temperature range
Storage temperature range
°C
°C
NOTES:
(1) 2.0
μ
s, pulse width, f=1.0 KH
Z
(2) Pulse test: 300
μ
s pulse width, 1% duty cycle
(3) Thermal resistance from junction to case and/or thermal resistance from junction to ambient
4/98
0.148 (3.74)DIA.
0.113 (2.87)
0.103 (2.62)
0.185 (4.70)
0.175 (4.44)
0.055 (1.39)
0.045 (1.14)
0.145 (3.68)
0.135 (3.43)
0.350 (8.89)
0.330 (8.38)
0.160 (4.06)
0.140 (3.56)
0.037 (0.94)
0.027 (0.68)
0.205 (5.20)
0.195 (4.95)
0.560 (14.22)
0.530 (13.46)
0.022 (0.56)
0.014 (0.36)
0.110 (2.79)
0.100 (2.54)
1
2
1.148 (29.16)
1.118 (28.40)
0.105 (2.67)
0.095 (2.41)
0.410 (10.41)
0.390 (9.91)
0.635 (16.13)
0.625 (15.87)
0.560 (14.22)
0.530 (13.46)
PIN
PIN 1
PIN 2
CASE
0.415 (10.54) MAX.
0.370 (9.40)
0.360 (9.14)
TO-220AC
Dimensions in inches and (millimeters)
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相關代理商/技術參數 |
參數描述 |
|---|---|
| MBR735 C0 | 制造商:SKMI/Taiwan 功能描述:Diode Schottky 35V 7.5A 2-Pin(2+Tab) TO-220A Tube 制造商:Taiwan Semiconductor 功能描述:Diode Schottky 35V 7.5A 2-Pin(2+Tab) TO-220A Tube |
| MBR735 | 制造商:Fairchild Semiconductor Corporation 功能描述:Schottky Rectifier |
| MBR735/45 | 功能描述:肖特基二極管與整流器 7.5 Amp 35 Volt RoHS:否 制造商:Skyworks Solutions, Inc. 產品:Schottky Diodes 峰值反向電壓:2 V 正向連續電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
| MBR735_07 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Schottky Barrier Rectifier |
| MBR735_1 | 制造商:TSC 制造商全稱:Taiwan Semiconductor Company, Ltd 功能描述:7.5 AMPS. Schottky Barrier Rectifiers |
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