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參數資料
型號: MBR745PBF
廠商: VISHAY SEMICONDUCTORS
元件分類: 參考電壓二極管
英文描述: Diode Schottky 45V 7.5A 3-Pin(3+Tab) TO-262 Tube
中文描述: Schottky (Diodes & Rectifiers) 7.5 Amp 45 Volt
文件頁數: 1/7頁
文件大小: 145K
代理商: MBR745PBF
VS-MBR7...PbF Series, VS-MBR7...-N3 Series
www.vishay.com
Vishay Semiconductors
Revision: 30-Aug-11
For technical questions within your region:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc91000
1
Document Number: 94299
Schottky Rectifier, 7.5 A
FEATURES
150 °C T
J
operation
High frequency operation
Low forward voltage drop
High
encapsulation
strength and moisture resistance
purity,
high
for
temperature
enhanced
epoxy
mechanical
Guard ring for enhanced ruggedness and long
term reliability
Compliant to RoHS Directive 2002/95/EC
Designed and qualified according to JEDEC-JESD47
Halogen-free according to IEC 61249-2-21 definition
(-N3 only)
DESCRIPTION
The VS-MBR7... Schottky rectifier has been optimized for
low reverse leakage at high temperature. The proprietary
barrier technology allows for reliable operation up to 150 °C
junction temperature. Typical applications are in switching
power supplies, converters, freewheeling diodes, and
reverse battery protection.
PRODUCT SUMMARY
Package
TO-220AC
I
F(AV)
V
R
V
F
at I
F
I
RM
max.
T
J
max.
7.5 A
35 V, 45 V
0.57 V
15 mA at 125 °C
150 °C
Diode variation
Single die
E
AS
7 mJ
Anode
1
3
Cathode
Base
cathode
2
TO-220AC
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
VALUES
UNITS
I
F(AV)
V
RRM
I
FSM
V
F
T
J
Rectangular waveform
7.5
A
35/45
V
t
p
= 5 μs sine
7.5 A
pk
, T
J
= 125 °C
690
A
0.57
V
Range
- 65 to 150
°C
VOLTAGE RATINGS
PARAMETER
SYMBOL
VS-MBR735PbF
VS-MBR735-N3
VS-MBR745PbF
VS-MBR745-N3
UNITS
Maximum DC reverse voltage
V
R
35
35
45
45
V
Maximum working peak reverse
voltage
V
RWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum average forward current
I
F(AV)
T
C
= 131 °C, rated V
R
7.5
A
Non-repetitive peak surge current
I
FSM
5 μs sine or 3 μs rect. pulse
Following any rated load
condition and with rated
V
RRM
applied
690
A
Surge applied at rated load condition half wave
single phase 60 Hz
T
J
= 25 °C, I
AS
= 2 A, L = 3.5 mH
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
150
Non-repetitive avalanche energy
E
AS
7
mJ
Repetitive avalanche current
I
AR
2
A
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