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參數資料
| 型號： | MBR830 |
| 廠商： | DIODES INC |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | 8.0A SCHOTTKY BARRIER RECTIFIER |
| 中文描述： | 8 A, 30 V, SILICON, RECTIFIER DIODE, TO-220AC |
| 封裝： | PLASTIC PACKAGE-2 |
| 文件頁數： | 1/2頁 |
| 文件大小： | 64K |
| 代理商： | MBR830 |
D
S
30030 Rev. B-4
1 of 2
MBR830-MBR860
MBR830 - MBR860
8.0A SCHOTTKY BARRIER RECTIFIER
Features
L
M
A
N
P
D
E
K
C
B
J
G
R
Pin 1
Pin 2
1
2
Case
TO-220AC
Min
Dim
A
B
C
D
E
G
J
K
L
M
N
P
R
All Dimensions in mm
Max
14.22
15.88
9.65
10.67
2.54
3.43
5.84
6.86
6.35
12.70
14.73
0.51
1.14
3.53
4.09
3.56
4.83
1.14
1.40
0.30
0.64
2.03
2.92
4.83
5.33
Maximum Ratings and Electrical Characteristics
@ T
A
= 25 C unless otherwise specified
Schottky Barrier Chip
Guard Ring Die Construction for
Transient Protection
Low Power Loss, High Efficiency
High Surge Capability
High Current Capability and Low Forward
Voltage Drop
For Use in Low Voltage, High Frequency
Inverters, Free Wheeling, and Polarity
Protection Application
Plastic Material: UL Flammability
Classification Rating 94V-0
Mechanical Data
Case: Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: See Diagram
Weight: 2.24 grams (approx.)
Mounting Position: Any
Marking: Type Number
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Symbol
MBR
830
MBR
835
MBR
840
MBR
845
MBR
850
MBR
860
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
(Note 1)
Non-Repetitive Peak Forward Surge Current
8.3ms single half sine-wave superimposed on rated load
(JEDEC Method)
Repetitive Peak Reverse Surge Current
Forward Voltage Drop
V
RRM
V
RWM
V
R
V
R(RMS)
30
35
40
45
50
60
V
21
24.5
28
31.5
35
42
V
@ T
C
= 125 C
I
O
8.0
A
I
FSM
150
A
@ t
2.0 s
I
RRM
1.0
A
@ I
F
= 8.0A, T
C
= 125 C
@ I
F
= 8.0A, T
C
= 25 C
@ I
F
= 16A, T
C
= 25 C
@ T
C
= 25 C
@ T
C
= 125 C
V
FM
0.57
0.70
0.84
0.70
0.80
0.95
V
Peak Reverse Current
at Rated DC Blocking Voltage
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance Junction to Case (Note 1)
Voltage Rate of Change (Rated V
R
)
Operating and Storage Temperature Range
I
RM
0.1
15
250
3.0
1000
mA
C
j
pF
K/W
V/ s
C
R
JC
dV/dt
T
j,
T
STG
-65 to +150
Notes:
1. Thermal resistance junction to case mounted on heatsink.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
相關PDF資料 |
PDF描述 |
|---|---|
| MBR860 | 8.0A SCHOTTKY BARRIER RECTIFIER |
| MBR835 | ECONOLINE: ROM - Micro Size SIP4 Package- 3kVDC Isolation- Industry Standard Pinout- UL94V-0 Package Material- Custom Solutions Available- Cost Effective- Efficiency to 85% |
| MBR850 | ECONOLINE: ROM - Micro Size SIP4 Package- 3kVDC Isolation- Industry Standard Pinout- UL94V-0 Package Material- Custom Solutions Available- Cost Effective- Efficiency to 85% |
| MBR840 | 8.0A SCHOTTKY BARRIER RECTIFIER |
| MBR845 | CAP, 27PF 50V CERAMIC NPO, 0805 |
相關代理商/技術參數 |
參數描述 |
|---|---|
| MBR830MFST1G | 制造商:ON Semiconductor 功能描述:8.0 A 30 V SCHOTTKY DIOD - Tape and Reel |
| MBR830MFST3G | 制造商:ON Semiconductor 功能描述:8.0 A 30 V SCHOTTKY DIOD - Tape and Reel |
| MBR835 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| MBR835RL | 功能描述:DIODE SCHOTTKY 35V 8A DO201AD RoHS:否 類別:分離式半導體產品 >> 單二極管/整流器 系列:- 標準包裝:100 系列:- 二極管類型:標準 電壓 - (Vr)（最大）:50V 電流 - 平均整流 (Io):6A 電壓 - 在 If 時為正向 (Vf)（最大）:1.4V @ 6A 速度:快速恢復 = 200mA（Io） 反向恢復時間(trr):300ns 電流 - 在 Vr 時反向漏電:15µA @ 50V 電容@ Vr, F:- 安裝類型:底座，接線柱安裝 封裝/外殼:DO-203AA，DO-4，接線柱 供應商設備封裝:DO-203AA 包裝:散裝 其它名稱:*1N3879 |
| MBR840 | 制造商:SPC Multicomp 功能描述:SCHOTTKY DIODE 8A 40V TO-220A 制造商:SPC Multicomp 功能描述:SCHOTTKY DIODE, 8A, 40V, TO-220A 制造商:SPC Multicomp 功能描述:SCHOTTKY DIODE, 8A, 40V, TO-220A; Diode Type:Schottky; Diode Configuration:Single; Repetitive Reverse Voltage Vrrm Max:40V; Forward Current If(AV):8A; Forward Voltage VF Max:550mV; Forward Surge Current Ifsm Max:150A; No. of Pins:2 ;RoHS Compliant: Yes |
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