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參數資料
| 型號： | MBRB8H100T4G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | SWITCHMODE Schottky Power Rectifier |
| 中文描述： | 8 A, 100 V, SILICON, RECTIFIER DIODE |
| 封裝： | LEAD FREE, PLASTIC, CASE 418B-04, D2PAK-3 |
| 文件頁數： | 1/6頁 |
| 文件大?。?/td> | 90K |
| 代理商： | MBRB8H100T4G |
Semiconductor Components Industries, LLC, 2008
January, 2008 - Rev. 2
1
Publication Order Number:
MBRB8H100/D
MBRB8H100T4G
SWITCHMODE
Schottky Power Rectifier
Surface Mount Power Package
This series of Power Rectifiers employs the Schottky Barrier
principle in a large metal-to-silicon power diode. State-of-the-art
geometry features epitaxial construction with oxide passivation and
metal overlay contact. Ideally suited for use in low voltage, high
frequency switching power supplies, free wheeling diodes, and
polarity protection diodes.
Features
Guardring for Stress Protection
Low Forward Voltage
175
°
C Operating Junction Temperature
Epoxy Meets UL 94 V-0 @ 0.125 in
Short Heat Sink Tab Manufactured - Not Sheared!
This is a Pb-Free Device
Mechanical Characteristics:
Case: Epoxy, Molded, Epoxy Meets UL 94 V-0
Weight: 1.7 grams (approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead and Mounting Surface Temperature for Soldering Purposes:
260
°
C Max. for 10 Seconds
Device Meets MSL1 Requirements
ESD Ratings: Machine Model, C (>400 V)
Human Body Model, 3B (>8000 V)
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
I
F(AV)
100
V
Average Rectified Forward Current
(Rated V
R
) T
C
= 146
°
C
8
A
Peak Repetitive Forward Current
(Rated V
R
, Square Wave, 20 kHz)
T
C
= 146
°
C
Max Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions
halfwave, single phase, 60 Hz, 25
°
C)
I
FRM
16
A
I
FSM
250
A
Operating Junction and Storage
Temperature Range (Note 1)
T
J
, T
stg
-65 to +175
°
C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. The heat generated must be less than the thermal conductivity from
Junction-to-Ambient: dP
D
/dT
J
< 1/R
JA
.
SCHOTTKY BARRIER
RECTIFIER
8 AMPERES, 100 VOLTS
1
3
4
http://onsemi.com
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
D
2
PAK
CASE 418B
PLASTIC
3
4
1
MARKING
DIAGRAM
A
Y
WW
B8H100 = Device Code
G
= Pb-Free Package
= Assembly Location
= Year
= Work Week
AY WW
B8H100G
(Pin 1 = No Connect)
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| MBRD10100CT-13 | 功能描述:DIODE SCHOTTKY 100V 5A TO252 制造商:diodes incorporated 系列:- 包裝:剪切帶（CT） 零件狀態:在售 二極管配置:1 對共陰極 二極管類型:肖特基 電壓 - DC 反向（Vr）（最大值）:100V 電流 - 平均整流（Io）（每二極管）:5A 不同 If 時的電壓 - 正向（Vf:840mV @ 5A 速度:快速恢復 = 200mA（Io） 不同?Vr 時的電流 - 反向漏電流:100μA @ 100V 工作溫度 - 結:-55°C ~ 175°C 安裝類型:表面貼裝 封裝/外殼:TO-252-3，DPak（2 引線 + 接片），SC-63 供應商器件封裝:TO-252，（D-Pak） 標準包裝:1 |
| MBRD10100CTTR | 功能描述:DIODE ARRAY SCHOTTKY 100V DPAK 制造商:smc diode solutions 系列:- 包裝:剪切帶（CT） 零件狀態:有效 二極管配置:1 對共陰極 二極管類型:肖特基 電壓 - DC 反向（Vr）（最大值）:100V 電流 - 平均整流（Io）（每二極管）:- 不同 If 時的電壓 - 正向（Vf）:850mV @ 5A 速度:快速恢復 = 200mA（Io） 反向恢復時間（trr）:- 不同?Vr 時的電流 - 反向漏電流:1mA @ 100V 安裝類型:表面貼裝 封裝/外殼:TO-252-3，DPak（2 引線+接片），SC-63 供應商器件封裝:DPAK 標準包裝:1 |
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