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參數資料
| 型號： | MBRD835L-T |
| 廠商： | DIODES INC |
| 元件分類： | 整流器 |
| 英文描述： | 8 A, 35 V, SILICON, RECTIFIER DIODE |
| 封裝： | PLASTIC, DPAK-3 |
| 文件頁數： | 1/3頁 |
| 文件大小： | 89K |
| 代理商： | MBRD835L-T |
Note:
Pins 1 & 3 must be electrically
connected at the printed circuit board.
DS30284 Rev. 3 - 3
1 of 3
MBRD835L
www.diodes.com
Diodes Incorporated
MBRD835L
8A LOW VF SCHOTTKY BARRIER RECTIFIER
Features
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Case: DPAK
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture sensitivity: Level 1 per J-STD-020C
Terminals: Solderable per MIL-STD-202, Method 208
Polarity: See Diagram
Marking: See Page 3
Weight: 0.4 grams (approx.)
Ordering Information: See Page 3
Mechanical Data
B
C
D
E
G
H
J
K
L
M
A
P
123
4
PIN 1
PIN 3
PIN 4, BOTTOMSIDE
HEAT SINK
Characteristic
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
35
V
RMS Reverse Voltage
VR(RMS)
25
V
Average Rectified Forward Current
@ TC = 88
°C
IF(AV)
8A
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave Superimposed on Rated Load
(JEDEC Method)
IFSM
75
A
Typical Thermal Resistance Junction to Case (Note 2)
RqJC
6.0
°C/W
Typical Thermal Resistance Junction to Ambient (Note 2)
RqJA
80
°C/W
Operating Temperature Range
Tj
-65 to +125
°C
Storage Temperature Range
TSTG
-65 to +150
°C
Guard Ring Die Construction for
Transient Protection
Low Power Loss, High Efficiency
High Surge Capability
Very Low Forward Voltage Drop
For Use in Low Voltage, High Frequency Inverters, Free
Wheeling, and Polarity Protection Applications
Maximum Ratings
@ TA = 25
°C unless otherwise specified
Electrical Characteristics @ TA = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
Reverse Breakdown Voltage (Note 1)
V(BR)R
35
V
IR = 1mA
Forward Voltage
VF
0.48
0.51
0.41
V
IF = 8A, TS = 25
°C
IF = 8A, TS = 125
°C
Peak Reverse Current (Note 1)
IR
0.1
1.4
35
mA
TS = 25
°C, VR = 35V
TS = 100
°C, VR = 35V
Total Capacitance
CT
600
pF
f = 1.0MHz, VR = 4.0V DC
DPAK
Dim
Min
Max
A
6.3
6.7
B
10
C
0.3
0.8
D
2.3 Nominal
E
2.1
2.5
G
0.4
0.6
H
1.2
1.6
J
5.3
5.7
K
0.5 Nominal
L
1.3
1.8
M
1.0
P
5.1
5.5
All Dimensions in mm
Notes:
1. Short duration test pulse used to minimize self-heating effect.
2. Mounted on PC board with 14mm2 (.013mm thick) copper pad areas.
SPICE MODEL: MBRD835L
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