- 您現在的位置：買賣IC網 > PDF目錄382289 > MBRM110ET3 (ON SEMICONDUCTOR) Surface Mount Schottky Power Rectifier PDF資料下載
參數資料
| 型號： | MBRM110ET3 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Surface Mount Schottky Power Rectifier |
| 中文描述： | 1 A, 10 V, SILICON, SIGNAL DIODE, DO-216AA |
| 封裝： | PLASTIC, CASE 457-04, POWERMITE-2 |
| 文件頁數： | 1/8頁 |
| 文件大小： | 81K |
| 代理商： | MBRM110ET3 |
Semiconductor Components Industries, LLC, 2001
October, 2001 – Rev. 0
1
Publication Order Number:
MBRM110E/D
MBRM110E
Surface Mount
Schottky Power Rectifier
POWERMITE
Power Surface Mount Package
The Schottky Powermite employs the Schottky Barrier principle
with a barrier metal and epitaxial construction that produces optimal
forward voltage drop–reverse current tradeoff. The advanced
packaging techniques provide for a highly efficient micro miniature,
space saving surface mount Rectifier. With its unique heatsink design,
the Powermite has the same thermal performance as the SMA while
being 50% smaller in footprint area, and delivering one of the lowest
height profiles,
<
1.1 mm in the industry. Because of its small size, it is
ideal for use in portable and battery powered products such as cellular
and cordless phones, chargers, notebook computers, printers, PDAs
and PCMCIA cards. Typical applications are ac/dc and dc–dc
converters, reverse battery protection, and “Oring” of multiple supply
voltages and any other application where performance and size are
critical.
Features:
Low I
R
Extends Battery Life
Low Profile – Maximum Height of 1.1 mm
Small Footprint – Footprint Area of 8.45 mm2
150
°
C Operating Junction Temperature
Low Thermal Resistance with Direct Thermal Path of Die on
Exposed Cathode Heat Sink
Mechanical Characteristics:
Powermite is JEDEC Registered as D0–216AA
Case: Molded Epoxy
Epoxy Meets UL 94V–O at 1/8
″
Weight: 62 mg (approximately)
Lead and Mounting Surface Temperature for Soldering Purposes.
260
°
C Maximum for 10 Seconds
MAXIMUM RATINGS
Please See the Table on the Following Page
SCHOTTKY BARRIER
RECTIFIER
1.0 AMPERES
10 VOLTS
http://onsemi.com
Device
Package
Shipping
ORDERING INFORMATION
MBRM110ET1 POWERMITE
3,000/Tape & Reel
POWERMITE
CASE 457
PLASTIC
CATHODE
ANODE
MARKING DIAGRAM
M
1E1
1E1 = Device Code
M
= Date Code
MBRM110ET3 POWERMITE 12,000/Tape & Reel
相關PDF資料 |
PDF描述 |
|---|---|
| MBRM120E | Surface Mount Schottky Power Rectifier |
| MBRM120ET1 | Surface Mount Schottky Power Rectifier |
| MBRM120ET3 | Surface Mount Schottky Power Rectifier |
| MBRM130L | Surface Mount Schottky Power Rectifier |
| MBRM130LT1 | Surface Mount Schottky Power Rectifier |
相關代理商/技術參數 |
參數描述 |
|---|---|
| MBRM110ET3G | 功能描述:肖特基二極管與整流器 1A 10V Low Leakage RoHS:否 制造商:Skyworks Solutions, Inc. 產品:Schottky Diodes 峰值反向電壓:2 V 正向連續電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
| MBRM110L | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Surface Mount Schottky Power Rectifier |
| MBRM110L_05 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Surface Mount Schottky Power Rectifier |
| MBRM110LT1 | 功能描述:肖特基二極管與整流器 1A 10V Low Vf RoHS:否 制造商:Skyworks Solutions, Inc. 產品:Schottky Diodes 峰值反向電壓:2 V 正向連續電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
| MBRM110LT1G | 功能描述:肖特基二極管與整流器 1A 10V Low Vf RoHS:否 制造商:Skyworks Solutions, Inc. 產品:Schottky Diodes 峰值反向電壓:2 V 正向連續電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
發布緊急采購，3分鐘左右您將得到回復。