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參數資料
| 型號： | MBRP20030CTLG |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 整流器 |
| 英文描述： | 100 A, 30 V, SILICON, RECTIFIER DIODE |
| 封裝： | LEAD FREE, PLASTIC, CASE 357C-03, POWERTAP II, 2 PIN |
| 文件頁數： | 1/4頁 |
| 文件大小： | 140K |
| 代理商： | MBRP20030CTLG |
Semiconductor Components Industries, LLC, 2006
September, 2006 Rev. 6
1
Publication Order Number:
MBRP20030CTL/D
MBRP20030CTL
Preferred Device
POWERTAPt II
SWITCHMODEt Power
Rectifier
The SWITCHMODE Power Rectifier uses the Schottky Barrier
principle with a platinum barrier metal. This stateoftheart device
has the following features:
Features
Dual Diode Construction May Be Paralleled for Higher Current Output
Guardring for Stress Protection
Low Forward Voltage Drop
150°C Operating Junction Temperature
Recyclable Epoxy
Guaranteed Reverse Avalanche Energy Capability
Improved Mechanical Ratings
PbFree Packages are Available*
Mechanical Characteristics:
Case: Epoxy, Molded with metal heatsink base
Weight: 80 Grams (Approximately)
Finish: All External Surfaces Corrosion Resistant
Top Terminal Torque: 2540 lbin Max
Base Plate Torques: See procedure given in the Package Outline Section
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
30
V
Average Rectified Forward Current
(At Rated VR, TC = 125°C)
Per Leg
Per Device
IF(AV)
100
200
A
Peak Repetitive Forward Current,
(At Rated VR, Square Wave,
20 kHz, TC = 100°C)
IFRM
200
A
NonRepetitive Peak Surge Current
(Surge Applied at Rated Load Conditions
Halfwave, Single Phase, 60 Hz)
IFSM
1500
A
Peak Repetitive Reverse Surge Current
(2.0 ms, 1.0 kHz)
IRRM
2.0
A
Storage Temperature Range
Tstg
55 to +150
°C
Operating Junction Temperature
TJ
55 to +150
°C
Voltage Rate of Change (Rated VR)
dv/dt
10,000
V/ms
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
LOW VF SCHOTTKY
BARRIER RECTIFIER
200 AMPERES, 30 VOLTS
Device
Package
Shipping
ORDERING INFORMATION
MBRP20030CTL
POWERTAP II 25 Units/Tray
1
2
3
Preferred devices are recommended choices for future use
and best overall value.
http://onsemi.com
MBRP20030CTLG POWERTAP II
(PbFree)
25 Units/Tray
POWERTAP II
CASE 357C
PLASTIC
1
2
3
MARKING DIAGRAM
B20030L
B20030L = Specific Device Code
MCC
= Mold Compound Code
A
= Assembly Location
YY
= Year
WW
= Work Week
G= PbFree Package
MCC
AYYWWG
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相關代理商/技術參數 |
參數描述 |
|---|---|
| MBRP20035L | 制造商:ON Semiconductor 功能描述:Diode Schottky 35V 200A 2-Pin Powertap-III 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| MBRP20045CT | 功能描述:肖特基二極管與整流器 200A 45V RoHS:否 制造商:Skyworks Solutions, Inc. 產品:Schottky Diodes 峰值反向電壓:2 V 正向連續電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
| MBRP20045CTG | 功能描述:肖特基二極管與整流器 200A 45V RoHS:否 制造商:Skyworks Solutions, Inc. 產品:Schottky Diodes 峰值反向電壓:2 V 正向連續電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
| MBRP20060 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:SCHOTTKY BARRIER RECTIFIER 200 AMPERES 60 VOLT |
| MBRP20060CT | 功能描述:肖特基二極管與整流器 200A 60V RoHS:否 制造商:Skyworks Solutions, Inc. 產品:Schottky Diodes 峰值反向電壓:2 V 正向連續電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
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