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參數資料
| 型號： | MBRS140T3 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Surface Mount Schottky Power Rectifier |
| 中文描述： | SILICON, SIGNAL DIODE |
| 封裝： | PLASTIC, SMB, 2 PIN |
| 文件頁數： | 1/4頁 |
| 文件大小： | 139K |
| 代理商： | MBRS140T3 |
1
Rectifier Device Data
SMB Power Surface Mount Package
. . . employing the Schottky Barrier principle in a metal–to–silicon power
rectifier. Features epitaxial construction with oxide passivation and metal
overlay contact. Ideally suited for low voltage, high frequency switching power
supplies; free wheeling diodes and polarity protection diodes.
Compact Package with J–Bend Leads Ideal for Automated Handling
Highly Stable Oxide Passivated Junction
Guardring for Over–Voltage Protection
Low Forward Voltage Drop
Mechanical Characteristics:
Case: Molded Epoxy
Epoxy Meets UL94, VO at 1/8
″
Weight: 95 mg (approximately)
Polarity: Notch in Plastic Body Indicates Cathode Lead
Lead and Mounting Surface Temperature for Soldering Purposes:
260
°
C Max. for 10 Seconds
Available in 12 mm Tape, 2500 Units per 13
″
Reel, Add “T3” Suffix to Part Number
Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable
Marking: B14L
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
40
Volts
Average Rectified Forward Current (At Rated VR, TC = 110
°
C)
Peak Repetitive Forward Current
(At Rated VR, Square Wave, 100 kHz, TC = 110
°
C)
IO
1.0
Amps
IFRM
2.0
Amps
Non–Repetitive Peak Surge Current
(Surge applied at rated load conditions, halfwave, single phase, 60 Hz)
IFSM
40
Amps
Storage / Operating Case Temperature
Tstg, TC
TJ
dv/dt
– 55 to +150
°
C
Operating Junction Temperature
– 55 to +125
°
C
Voltage Rate of Change (Rated VR, TJ = 25
°
C)
THERMAL CHARACTERISTICS
Thermal Resistance — Junction–to–Lead (2)
Thermal Resistance — Junction–to–Ambient (2)
10,000
V/ s
R
θ
JL
R
θ
JA
24
80
°
C/W
ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage (1)
VF
TJ = 25
°
C
0.5
0.6
TJ = 125
°
C
0.425
0.58
Volts
(IF = 1.0 A)
(IF = 2.0 A)
see Figure 2
Maximum Instantaneous Reverse Current
IR
TJ = 25
°
C
0.4
0.02
TJ = 100
°
C
10
5.0
mA
(VR = 40 V)
(VR = 20 V)
see Figure 4
This document contains information on a new product. Specifications and information herein are subject to change without notice.
(1) Pulse Test: Pulse Width
≤
250
μ
s, Duty Cycle
≤
2.0%.
(2) Mounted with minimum recommended pad size, PC Board FR4.
Order this document
by MBRS140LT3/D
SEMICONDUCTOR TECHNICAL DATA
SCHOTTKY BARRIER
RECTIFIER
1.0 AMPERES
40 VOLTS
CASE 403A–03
SMB
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| MBRS2040LT3 | FAN COVER, SDR250; Length / Height, external:127mm; Width, external:81mm; Depth, external:30mm RoHS Compliant: Yes |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| MBRS140T3G | 功能描述:肖特基二極管與整流器 1A 40V RoHS:否 制造商:Skyworks Solutions, Inc. 產品:Schottky Diodes 峰值反向電壓:2 V 正向連續電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
| MBRS140T3G | 制造商:ON Semiconductor 功能描述:Schottky Rectifier Breakdown Voltage Max |
| MBRS140T3H | 制造商:Rochester Electronics LLC 功能描述: 制造商:ON Semiconductor 功能描述: |
| MBRS140TR | 功能描述:肖特基二極管與整流器 1.0 Amp 40 Volt RoHS:否 制造商:Skyworks Solutions, Inc. 產品:Schottky Diodes 峰值反向電壓:2 V 正向連續電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
| MBRS140TRPBF | 功能描述:DIODE SCHOTTKY 40V 1A SMB RoHS:是 類別:分離式半導體產品 >> 單二極管/整流器 系列:- 標準包裝:100 系列:- 二極管類型:標準 電壓 - (Vr)（最大）:50V 電流 - 平均整流 (Io):6A 電壓 - 在 If 時為正向 (Vf)（最大）:1.4V @ 6A 速度:快速恢復 = 200mA（Io） 反向恢復時間(trr):300ns 電流 - 在 Vr 時反向漏電:15µA @ 50V 電容@ Vr, F:- 安裝類型:底座，接線柱安裝 封裝/外殼:DO-203AA，DO-4，接線柱 供應商設備封裝:DO-203AA 包裝:散裝 其它名稱:*1N3879 |
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