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參數資料
| 型號： | MBRS2H100T3G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Surface Mount Schottky Power Rectifier |
| 中文描述： | 2 A, 100 V, SILICON, RECTIFIER DIODE |
| 封裝： | LEAD FREE, PLASTIC, CASE 403A-03, SMB, 2 PIN |
| 文件頁數： | 1/4頁 |
| 文件大小： | 88K |
| 代理商： | MBRS2H100T3G |
Semiconductor Components Industries, LLC, 2007
June, 2007 - Rev. 2
1
Publication Order Number:
MBRS2H100/D
MBRS2H100T3G
Surface Mount
Schottky Power Rectifier
SMB Power Surface Mount Package
This device employs the Schottky Barrier principle in a
metal-to-silicon power rectifier. Features epitaxial construction with
oxide passivation and metal overlay contact. Ideally suited for low
voltage, high frequency switching power supplies; free wheeling
diodes and polarity protection diodes.
Features
Compact Package with J-Bend Leads Ideal for Automated Handling
Highly Stable Oxide Passivated Junction
Guard-Ring for Overvoltage Protection
Low Forward Voltage Drop
This is a Pb-Free Device
Mechanical Characteristics
Case: Molded Epoxy
Epoxy Meets UL 94 V-0 @ 0.125 in
Weight: 95 mg (Approximately)
Cathode Polarity Band
Lead and Mounting Surface Temperature for Soldering Purposes:
260
°
C Max. for 10 Seconds
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
ESD Ratings: Machine Model = B, Human Body Model = 3B
Device Meets MSL1 Requirements
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
100
V
Average Rectified Forward Current
I
O
2.0
A
Non-Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions
Halfwave, Single Phase, 60 Hz)
I
FSM
130
A
Storage Temperature Range
T
stg
-65 to +175
°
C
Operating Junction Temperature (Note 1)
T
J
-65 to +175
°
C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. The heat generated must be less than the thermal conductivity from
Junction-to-Ambient: dP
D
/dT
J
< 1/R
JA
.
Device
Package
Shipping
ORDERING INFORMATION
SMB
CASE 403A
PLASTIC
MBRS2H100T3G
SMB
(Pb-Free)
2500 / Tape & Reel
SCHOTTKY BARRIER
RECTIFIER
2.0 AMPERES, 100 VOLTS
http://onsemi.com
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
MARKING DIAGRAM
B210
A
Y
WW
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb-Free Package
(Note: Microdot may be in either location)
AYWW
B210
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相關代理商/技術參數 |
參數描述 |
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| MBRS2H100T3G_09 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Surface Mount Schottky Power Rectifier SMA/SMB Power Surface Mount Package |
| MBRS3045CT | 制造商:TSC 制造商全稱:Taiwan Semiconductor Company, Ltd 功能描述:30.0AMPS Surface Mount Schottky Barrier Rectifier |
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| MBRS30H45CT | 功能描述:肖特基二極管與整流器 30A,45V,DUAL SCHOTTKY Rect RoHS:否 制造商:Skyworks Solutions, Inc. 產品:Schottky Diodes 峰值反向電壓:2 V 正向連續電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
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