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參數資料
| 型號： | MBT3906DW1T1 |
| 廠商： | 樂山無線電股份有限公司 |
| 英文描述： | Dual General Purpose Transistors |
| 中文描述： | 雙通用晶體管 |
| 文件頁數： | 2/6頁 |
| 文件大?。?/td> | 111K |
| 代理商： | MBT3906DW1T1 |
MBT3906DW1T1
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage (Note 2)
V
(BR)CEO
40
Vdc
CollectorBase Breakdown Voltage
V
(BR)CBO
40
Vdc
EmitterBase Breakdown Voltage
V
(BR)EBO
5.0
Vdc
Base Cutoff Current
I
BL
50
nAdc
Collector Cutoff Current
I
CEX
50
nAdc
ON CHARACTERISTICS
(Note 2)
DC Current Gain
(I
C
= 0.1 mAdc, V
CE
= 1.0 Vdc)
(I
C
= 1.0 mAdc, V
CE
= 1.0 Vdc)
(I
C
= 10 mAdc, V
CE
= 1.0 Vdc)
(I
C
= 50 mAdc, V
CE
= 1.0 Vdc)
(I
C
= 100 mAdc, V
CE
= 1.0 Vdc)
h
FE
60
80
100
60
30
300
CollectorEmitter Saturation Voltage
(I
C
= 10 mAdc, I
B
= 1.0 mAdc)
(I
C
= 50 mAdc, I
B
= 5.0 mAdc)
V
CE(sat)
0.25
0.4
Vdc
BaseEmitter Saturation Voltage
(I
C
= 10 mAdc, I
B
= 1.0 mAdc)
(I
C
= 50 mAdc, I
B
= 5.0 mAdc)
V
BE(sat)
0.65
0.85
0.95
Vdc
SMALLSIGNAL CHARACTERISTICS
CurrentGain Bandwidth Product
f
T
250
MHz
Output Capacitance
C
obo
4.5
pF
Input Capacitance
2. Pulse Test: Pulse Width
≤
300 s; Duty Cycle
≤
2.0%.
C
ibo
10.0
pF
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
Input Impedance
(V
CE
= 10 Vdc, I
C
= 1.0 mAdc, f = 1.0 kHz)
h
ie
2.0
12
k
Voltage Feedback Ratio
(V
CE
= 10 Vdc, I
C
= 1.0 mAdc, f = 1.0 kHz)
h
re
0.1
10
X 10
4
SmallSignal Current Gain
(V
CE
= 10 Vdc, I
C
= 1.0 mAdc, f = 1.0 kHz)
h
fe
100
400
Output Admittance
(V
CE
= 10 Vdc, I
C
= 1.0 mAdc, f = 1.0 kHz)
h
oe
3.0
60
mhos
Noise Figure
(V
CE
= 5.0 Vdc, I
C
= 100 Adc, R
S
= 1.0 k , f = 1.0 kHz)
NF
4.0
dB
SWITCHING CHARACTERISTICS
Delay Time
(V
CC
= 3.0 Vdc, V
BE
= 0.5 Vdc)
t
d
35
ns
Rise Time
(I
C
= 10 mAdc, I
B1
= 1.0 mAdc)
t
r
35
Storage Time
(V
CC
= 3.0 Vdc, I
C
= 10 mAdc)
t
s
225
ns
Fall Time
(I
B1
= I
B2
= 1.0 mAdc)
t
f
75
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相關代理商/技術參數 |
參數描述 |
|---|---|
| MBT3906DW1T1G | 功能描述:兩極晶體管 - BJT SS GP XSTR PNP 40V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MBT3906DW1T1G_09 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Dual General Purpose Transistor |
| MBT3906DW1T2G | 制造商:ON Semiconductor 功能描述:SS SC88 GP XSTR PNP 40V - Tape and Reel 制造商:ON Semiconductor 功能描述:Dual PNP Bipolar Transistor 制造商:ON Semiconductor 功能描述:REEL - SS SC88 GP XSTR PNP 40V |
| MBT3906DW1T3 | 制造商:Rochester Electronics LLC 功能描述:- Tape and Reel 制造商:ON Semiconductor 功能描述: |
| MBT3946DW | 制造商:WEITRON 制造商全稱:Weitron Technology 功能描述:Dual General Purpose Transistor NPN+PNP Silicon |
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