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參數(shù)資料
| 型號： | MBT3906DW1T2 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 200 mA, 40 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | SC-88, 6 PIN |
| 文件頁數(shù)： | 1/30頁 |
| 文件大小： | 471K |
| 代理商： | MBT3906DW1T2 |
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2–286
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Dual General Purpose Transistors
The MBT3904DW1T1, MBT3906DW1T1, and MBT3946DW1T1 devices are
spin–offs of our popular SOT–23/SOT–323 three–leaded devices. They are designed
for general purpose amplifier applications and are housed in the SOT–363 six–leaded
surface mount package. By putting two discrete devices in one package, these
devices are ideal for low–power surface mount applications where board space is at
a premium.
hFE, 100–300
Low VCE(sat), ≤ 0.4 V
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
Available in 8 mm, 7–inch/3,000 Unit Tape and Reel
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector – Emitter Voltage
MBT3904DW1T1 (NPN)
MBT3906DW1T1 (PNP)
VCEO
40
–40
Vdc
Collector – Base Voltage
MBT3904DW1T1 (NPN)
MBT3906DW1T1 (PNP)
VCBO
60
–40
Vdc
Emitter – Base Voltage
MBT3904DW1T1 (NPN)
MBT3906DW1T1 (PNP)
VEBO
6.0
–5.0
Vdc
Collector Current — Continuous
MBT3904DW1T1 (NPN)
MBT3906DW1T1 (PNP)
IC
200
–200
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Package Dissipation(1)
TA = 25°C
PD
150
mW
Thermal Resistance Junction to Ambient
RqJA
833
°C/W
Junction and Storage Temperature
TJ, Tstg
– 55 to
+150
°C
1. Device mounted on FR4 glass epoxy printed circuit board using the minimum
1. recommended footprint.
DEVICE MARKING
MBT3904DW1T1 = MA MBT3946DW1T1 = 46
MBT3906DW1T1 = A2
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MBT3904DW1T1
MBT3906DW1T1
MBT3946DW1T1
CASE 419B–01, STYLE 1
1
2
3
6 5
4
MBT3904DW1T1
MBT3906DW1T1
MBT3946DW1T1
Q1
(1)
(2)
(3)
(4)
(5)
(6)
Q2
MBT3904DW1T1
Q1
(1)
(2)
(3)
(4)
(5)
(6)
Q2
MBT3906DW1T1
Q1
(1)
(2)
(3)
(4)
(5)
(6)
Q2
MBT3946DW1T1*
*Q1 same as MBT3906DW1T1
Q2 same as MBT3904DW1T1
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MBT3904DW1T2 | 200 mA, 40 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR |
| MBT3906DW1T3 | 200 mA, 40 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR |
| MBT3946DW1T1 | 200 mA, 40 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR |
| MBT3906DW1T1 | 200 mA, 40 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR |
| MC-10118BF1-ENY-A | SPECIALTY MICROPROCESSOR CIRCUIT, PBGA481 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MBT3906DW1T2G | 制造商:ON Semiconductor 功能描述:SS SC88 GP XSTR PNP 40V - Tape and Reel 制造商:ON Semiconductor 功能描述:Dual PNP Bipolar Transistor 制造商:ON Semiconductor 功能描述:REEL - SS SC88 GP XSTR PNP 40V |
| MBT3906DW1T3 | 制造商:Rochester Electronics LLC 功能描述:- Tape and Reel 制造商:ON Semiconductor 功能描述: |
| MBT3946DW | 制造商:WEITRON 制造商全稱:Weitron Technology 功能描述:Dual General Purpose Transistor NPN+PNP Silicon |
| MBT3946DW1T1 | 功能描述:兩極晶體管 - BJT 200mA 40V Dual RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MBT3946DW1T1G | 功能描述:兩極晶體管 - BJT 200mA 40V Dual Complementary RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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