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參數資料
| 型號： | MBT5401 |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | SILICON P-N-P HIGH-VOLTAGE TRANSISTOR |
| 中文描述： | 進步黨硅高壓晶體管 |
| 文件頁數： | 1/1頁 |
| 文件大小： | 34K |
| 代理商： | MBT5401 |
Pulse Test 300 S, Duty Cycle. 2%
MBT5401
MBT5401
SILICON P-N-P HIGH-VOLTAGE TRANSISTOR
Type
SOT-23
1. BASE
2. COLLECTOR
3. EMITTER
Color Code
Black
Marking
MBT5401
ABSOLUTE MAXIMUM RATINGS
Symbol
Min.
T
T
P
V
V
V
I
j
tot
CBO
CEO
EBO
C
stg
55
Descriptions
Storage Temperature
Junction Temperature
Maximum Power Dissipation (Ta=25 )
Maximum Collector to Base Voltage
Maximum Collector to Emitter Voltage
Maximum Collector Current
Maximum Emitter to Base Voltage
C
Max.
Typ.
Unit
150
150
250
500
160
150
5
mW
C
V
V
V
mA
C
ELECTRICAL CHARACTERISTICS Ta 25
( )
Descriptions
Max.
Unit
240
DC Current Gain
Symbol
h
h
h
FE3
FE2
FE1
Typ.
Min.
50
60
50
Test Conditions
V
I
CE
C
5V,
1mA
V
I
CE
C
5V,
10mA
V
I
CE
C
5V,
50mA
50
8.0
Collector Cut-off Current
Output Capacitance
P
C
F
ob
50
uA
uA
I
CBO
Gain Bandwidth product
100
MHz
f
T
V
V
CB
amb
120V,
I
E
0mA
V
CB 10V,
I
f
T
E
V
CE 10V,
I
C
0mA,
1MHz
150 C
CB
120V,
I
E
0mA,
10mA
2L
MBT5401
Marking
P / N
THERMAL CHARACTERISTICS
R
th j-a
500
K/W
Thermal Resistance at T P R +R +R +T
( )
j
th j-t
th t-s
th s-a
amb
Symbol
Descriptions
Max.
Min.
Typ.
Unit
TEL:(852)23413351 FAX:(852)27978275
WEB SITE:http://www.daiwahk.com
V
CE Sat
( )
f 1kHz
V
CB
10V,
I
E
I
E
1mA,
V
V
V
V
V
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
160
150
( )
V
BE Sat
0.5
0.2
1
1
V
V
Collector Saturation Voltage
Base Saturation Voltage
I
C
I
C
100uA
I
E
0
I
C
1mA,
I
B
0
50mA,
I
B
5mA
I
I
C
I
C
50mA,
I
B
5mA
10mA,
I
B
1mA
C
10mA,
I
B
1mA
Small-Signal Current Gain
200
h
fe
Emitter to Base Breakdown Voltage
5
40
BV
BV
BV
EBO
CBO
CEO
I
C
0mA,
10uA
1
2
3
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