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參數(shù)資料
| 型號： | MBV109T1 |
| 廠商： | 樂山無線電股份有限公司 |
| 英文描述： | Silicon Epicap Diode |
| 中文描述： | 硅二極管Epicap |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 146K |
| 代理商： | MBV109T1 |
LESHAN RADIO COMPANY, LTD.
MBV109. MMBV109*. MV209*
–1/2
1
3
2
Designed for general frequency control and tuning applications;
providing solid–state reliability in replacement of mechanical tuning
methods.
High Q with Guaranteed Minimum Values at VHF Frequencies
Controlled and Uniform Tuning Ratio
Available in Surface Mount Package
Silicon Epicap Diode
3
CATHODE
1
ANODE
MAXIMUM RATINGS
Rating
Symbol
Value
MMBV109LT1
30
200
Unit
MBV109T1
MV209
Reverse Voltage
Forward Current
Device Dissipation
@T
A
= 25°C
Derate above 25°C
Junction Temperature
Storage Temperature Range
DEVICE MARKING
MBV109T1= J4A, MMBV109LT1 =M4A, MV209 = MV209
ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise noted)
Characteristic
Reverse Breakdown Voltage
( I
R
= 10
μ
Adc)
Reverse Voltage Leakage Current
( V
R
= 25Vdc)
Diode Capacitance Temperature Coefficient
(V
R
= 3.0 Vdc, f = 1.0 MHz)
V
R
I
F
P
D
Vdc
mAdc
280
2.8
200
2.0
+125
200
1.6
mW
mW/°C
°C
°C
T
J
T
stg
–55 to +150
Symbol
Min
Typ
Max
Unit
V
(BR)R
30
—
—
Vdc
I
R
—
—
0.1
mAdc
TC
C
—
300
—
ppm/°C
Device Type
Min
Nom
Max
Min
Min
Max
MBV109T1, MMBV109LT1, MV209
26
29
32
200
5.0
6.5
1. C
R
is the ratio of C
t
measured at 3 V dc divided by C
t
measured at 25 Vdc.
MMBV109LT1
is also available in bulk packaging. Use
MMBV109L
as the device title to order this device in bulk.
C
T
Diode Capacitance
V
R
=3.0Vdc, f =1.0MHz
p F
Q, Figure of
Merit
V
R
= 3.0Vdc
f = 50MHz
C
R,
Capacitance
Ratio
C
3
/ C
25
f=1.0MHz (Note 1)
MMBV109LT1
MBV109T1
MV209
CASE 318–08, STYLE 6
SOT– 23 (TO–236AB)
26–32 pF
VOLTAGE VARIABLE
CAPACITANCE DIODES
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