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參數資料
| 型號： | MC-428LFG641 |
| 廠商： | NEC Corp. |
| 英文描述： | 3.3 V Operation 8M-Word By 72-Bit Dynamic RAM Module(工作電壓為3.3V的DRAM模塊) |
| 中文描述： | 3.3 V工作電壓800萬字由72位動態內存模塊（工作電壓為3.3伏的內存模塊） |
| 文件頁數： | 1/32頁 |
| 文件大小： | 274K |
| 代理商： | MC-428LFG641 |
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1996
MOS INTEGRATED CIRCUIT
MC-428LFG641
3.3 V OPERATION 8M-WORD BY 64-BIT DYNAMIC RAM MODULE
UNBUFFERED TYPE, EDO
DATA SHEET
The mark
shows major revised points.
Document No. M11909EJ4V0DS00 (4th edition)
Date Published October 1997 NS
Printed in Japan
The information in this document is subject to change without notice.
Description
The MC-428LFG641 is a 8,388,608 words by 64 bits dynamic RAM module on which 8 pieces of 64M DRAM :
μ
PD4265805 are assembled.
This module provides high density and large quantities of memory in a small space without utilizing the surface-
mounting technology on the printed circuit board.
Decoupling capacitors are mounted on power supply line for noise reduction.
Features
Unbuffered type
EDO (Hyper page mode)
8,388,608 words by 64 bits organization
Fast access and cycle time
Family
Access time
R/W cycle time
EDO (Hyper page mode)
Power consumption (MAX.)
(MAX.)
(MIN.)
cycle time (MIN.)
Active
Standby
MC-428LFG641-A50
50 ns
84 ns
20 ns
3.89 W
14.4 mW
MC-428LFG641-A60
60 ns
104 ns
25 ns
3.31 W
(CMOS level input)
Refresh cycle
Family
Refresh cycle
Refresh
MC-428LFG641-A50
4,096 cycles / 64 ms
/RAS only refresh, Normal read / write, /CAS before /RAS refresh,
MC-428LFG641-A60
Hidden refresh
168-pin dual in-line memory module (Pin pitch = 1.27 mm)
Single +3.3 V ± 0.3 V power supply
Serial PD
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| MC-428LFH641 | 3.3 V Operation 8M-Word By 72-Bit Dynamic RAM Module(工作電壓為3.3V的DRAM模塊) |
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