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參數(shù)資料
型號(hào): MC-4516CB647PF-A75
廠商: NEC Corp.
英文描述: 16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE
中文描述: 1,600字,64位同步動(dòng)態(tài)RAM模塊無(wú)緩沖型
文件頁(yè)數(shù): 1/16頁(yè)
文件大小: 149K
代理商: MC-4516CB647PF-A75
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
1999
MOS INTEGRATED CIRCUIT
MC-4516CA726
16M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE
UNBUFFERED TYPE
DATA SHEET
Document No. M14333EJ2V0DS00 (2nd edition)
Date Published January 2000 NS CP(K)
Printed in Japan
The mark
shows major revised points.
Description
The MC-4516CA726 is a 16,777,216 words by 72 bits synchronous dynamic RAM module on which 9 pieces of
128M SDRAM:
μ
PD45128841 are assembled.
This module provides high density and large quantities of memory in a small space without utilizing the surface-
mounting technology on the printed circuit board.
Decoupling capacitors are mounted on power supply line for noise reduction.
Features
16,777,216 words by 72 bits organization (ECC Type)
Clock frequency and access time from CLK
Part number
/CAS latency
Clock frequency
(MAX.)
Access time from CLK
(MAX.)
MC-4516CA726EF-A80
CL = 3
125 MHz
6
ns
CL = 2
100 MHz
6
ns
MC-4516CA726EF-A10
CL = 3
100 MHz
6
ns
CL = 2
77 MHz
7
ns
MC-4516CA726PF-A80
CL = 3
125 MHz
6
ns
CL = 2
100 MHz
6
ns
MC-4516CA726PF-A10
CL = 3
100 MHz
6
ns
CL = 2
77 MHz
7
ns
Fully Synchronous Dynamic RAM, with all signals referenced to a positive clock edge
Pulsed interface
Possible to assert random column address in every cycle
Quad internal banks controlled by BA0 and BA1 (Bank Select)
Programmable burst-length (1, 2, 4, 8 and full page)
Programmable wrap sequence (sequential
/
interleave)
Programmable /CAS latency (2, 3)
Automatic precharge and controlled precharge
CBR (Auto) refresh and self refresh
All DQs have 10
±
10
% of series resistor
Single 3.3
V
±
0.3
V power supply
LVTTL compatible
4,096 refresh cycles/64
ms
Burst termination by Burst Stop command and Precharge command
168-pin dual in-line memory module (Pin pitch = 1.27
mm)
Unbuffered type
Serial PD
#
#
相關(guān)PDF資料
PDF描述
MC-4516DA727PFA-A75 16M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE
MC-4516CB64ES 16 M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM
MC-4516CB64PS 16 M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM
MC-4516CB64ES-A10B 16 M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM
MC-4516CB64PS-A10B 16 M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM
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MC-4516CB647XF-A75 制造商:ELPIDA 制造商全稱(chēng):Elpida Memory 功能描述:16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE
MC-4516CB647XFA-A75 制造商:ELPIDA 制造商全稱(chēng):Elpida Memory 功能描述:16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE
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