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參數資料
| 型號： | MC-4516CD641ES |
| 廠商： | NEC Corp. |
| 英文描述： | 16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM |
| 中文描述： | 1,600字，64位同步動態隨機存儲器模塊以便內存 |
| 文件頁數： | 1/16頁 |
| 文件大小： | 150K |
| 代理商： | MC-4516CD641ES |
1999
MOS INTEGRATED CIRCUIT
MC-4516CD641ES, 4516CD641PS
16M-WORD BY 64-BIT
SYNCHRONOUS DYNAMIC RAM MODULE (SO DIMM)
Document No. M14014EJ5V0DS00 (5th edition)
Date Published February 2000 NS CP(K)
Printed in Japan
DATA SHEET
The mark
shows major revised points.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Description
The MC-4516CD641ES and MC-4516CD641PS are 16,777,216 words by 64 bits synchronous dynamic RAM
module (Small Outline DIMM) on which 8 pieces of 128M SDRAM:
μ
PD45128163 are assembled.
These modules provide high density and large quantities of memory in a small space without utilizing the surface-
mounting technology on the printed circuit board.
Decoupling capacitors are mounted on power supply line for noise reduction.
Features
16,777,216 words by 64 bits organization
Clock frequency and access time from CLK
Part number
/CAS latency
Clock frequency (MAX.)
Access time from CLK (MAX.)
MC-4516CD641ES-A80
CL = 3
125
MHz
6
ns
CL = 2
100
MHz
6
ns
MC-4516CD641ES-A10
CL = 3
100 MHz
6
ns
CL = 2
77 MHz
7
ns
MC-4516CD641PS-A80
CL = 3
125
MHz
6
ns
CL = 2
100
MHz
6
ns
MC-4516CD641PS-A10
CL = 3
100 MHz
6
ns
CL = 2
77 MHz
7
ns
Fully Synchronous Dynamic RAM, with all signals referenced to a positive clock edge
Pulsed interface
Possible to assert random column address in every cycle
Quad internal banks controlled by BA0, BA1 (Bank Select)
Programmable burst-length (1, 2, 4, 8 and Full Page)
Programmable wrap sequence (Sequential
/
Interleave)
Programmable /CAS latency (2, 3)
Automatic precharge and controlled precharge
CBR (Auto) refresh and self refresh
Single 3.3
V
±
0.3
V power supply
LVTTL compatible
4,096 refresh cycles/64
ms
Burst termination by Burst Stop command and Precharge command
144-pin small outline dual in-line memory module (Pin pitch = 0.8
mm)
Unbuffered type
Serial PD
#
#
相關PDF資料 |
PDF描述 |
|---|---|
| MC-4516CD641PS | 16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM |
| MC-4516CD641PS-A10 | 16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM |
| MC-4516CD641PS-A80 | 16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM |
| MC-4516CD645 | 16M-Word By 64-BIT Dynamic RAM Module(動態RAM模塊) |
| MC-4516CD646 | 16M-Word By 64-BIT Dynamic RAM Module(16M×64位動態RAM模塊) |
相關代理商/技術參數 |
參數描述 |
|---|---|
| MC-4516CD641ES-A10 | 制造商:NEC 制造商全稱:NEC 功能描述:16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM |
| MC-4516CD641ES-A80 | 制造商:NEC 制造商全稱:NEC 功能描述:16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM |
| MC-4516CD641PS | 制造商:NEC 制造商全稱:NEC 功能描述:16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM |
| MC-4516CD641PS-A10 | 制造商:NEC 制造商全稱:NEC 功能描述:16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM |
| MC-4516CD641PS-A80 | 制造商:NEC 制造商全稱:NEC 功能描述:16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM |
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