- 您現在的位置：買賣IC網 > PDF目錄383556 > MC-458CB64S (NEC Corp.) Synchronous Dynamic RAM Module(同步動態RAM模塊) PDF資料下載
參數資料
| 型號： | MC-458CB64S |
| 廠商： | NEC Corp. |
| 英文描述： | Synchronous Dynamic RAM Module(同步動態RAM模塊) |
| 中文描述： | 同步動態隨機存儲器模塊（同步動態內存模塊） |
| 文件頁數： | 1/20頁 |
| 文件大?。?/td> | 196K |
| 代理商： | MC-458CB64S |
The information in this document is subject to change without notice.
1996
DATA SHEET
MOS INTEGRATED CIRCUIT
MC-458CB64S
8 M-WORD BY 64-BIT
SYNCHRONOUS DYNAMIC RAM MODULE (SO DIMM)
Document No. M12263EJ6V0DS00 (6th edition)
Date Published September 1998 NS CP(K)
Printed in Japan
The mark
shows major revised points.
Description
The MC-458CB64S is a 8,388,608 words by 64 bits synchronous dynamic RAM module (Small Outline DIMM) on
which 8 pieces of 64 M SDRAM :
μ
PD4564841 are assembled.
This module provides high density and large quantities of memory in a small space without utilizing the surface-
mounting technology on the printed circuit board.
Decoupling capacitors are mounted on power supply line for noise reduction.
Features
8,388,608 words by 64 bits organization
Clock frequency and Clock access time
Family
/CAS Latency
Clock frequency
Burst cycle time
Power consumption (MAX.)
(MAX.)
(MIN.)
Active
Standby
(CMOS level input )
MC-458CB64S-A10
CL = 3
100
MHz
8
ns
3,888
mW
57.6
mW
CL = 2
67 MHz
9
ns
MC-458CB64S-A12
CL = 3
83 MHz
9
ns
2,880
mW
CL = 2
55 MHz
11
ns
MC-458CB64SA-A80
CL = 3
125 MHz
6
ns
3,888 mW
14.4 mW
CL = 2
100 MHz
6
ns
3,744 mW
MC-458CB64SA-A10
CL = 3
100 MHz
6
ns
3,888 mW
CL = 2
77 MHz
7
ns
3,744 mW
MC-458CB64SA-A10B
CL = 3
100 MHz
7
ns
3,312 mW
CL = 2
67 MHz
8
ns
3,024 mW
Fully Synchronous Dynamic RAM, with all signals referenced to a positive clock edge
Pulsed interface
Possible to assert random column address in every cycle
Quad internal banks controlled by BA0 and BA1 (Bank Select)
Programmable burst-length (1, 2, 4, 8 and Full Page)
Programmable wrap sequence (Sequential
/
Interleave)
Programmable /CAS latency (2, 3)
Automatic precharge and controlled precharge
CBR (Auto) refresh and self refresh
Single +3.3
V
±
0.3
V power supply
LVTTL compatible
4,096 refresh cycles/64
ms
Burst termination by Burst Stop command and Precharge command
144-pin small outline dual in-line memory module (Pin pitch = 0.8
mm)
Unbuffered type
Serial PD
相關PDF資料 |
PDF描述 |
|---|---|
| MC-458CD64S | Synchronous Dynamic RAM Module(同步動態RAM 模塊) |
| MC-458DA726 | 8M-Word By72-BIT Dynamic RAM Module(8M×72位動態RAM模塊) |
| MC-45D16CA721KF-C75 | 16 M-WORD BY 72-BIT DDR SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE |
| MC-45D16CB641KF-C75 | 16 M-WORD BY 64-BIT DDR SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE |
| MC-45D16CA721KF-C80 | 16 M-WORD BY 72-BIT DDR SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE |
相關代理商/技術參數 |
參數描述 |
|---|---|
| MC458CB64SAA10B | 制造商:NEC Electronics Corporation 功能描述: |
| MC459 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:4 wide 3-2-2-3 input expander for and-or-invert gae |
| MC-45D16CA721 | 制造商:NEC 制造商全稱:NEC 功能描述:16 M-WORD BY 72-BIT DDR SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE |
| MC-45D16CA721KF-C75 | 制造商:NEC 制造商全稱:NEC 功能描述:16 M-WORD BY 72-BIT DDR SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE |
| MC-45D16CA721KF-C80 | 制造商:NEC 制造商全稱:NEC 功能描述:16 M-WORD BY 72-BIT DDR SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE |
發布緊急采購，3分鐘左右您將得到回復。