- 您現在的位置：買賣IC網 > PDF目錄383558 > MC-4R64CEE6B-745 (NEC Corp.) Process/Temperature Controller; Control Operation:Auto/Manual, Ramp/Soak, Stand By, Valve Positioning; Control Output Current:0-20 mA; Control Output Relay Rating:264 VAC / 2 A; Control Type:On/Off, PID RoHS Compliant: NA PDF資料下載
參數資料
| 型號： | MC-4R64CEE6B-745 |
| 廠商： | NEC Corp. |
| 英文描述： | Process/Temperature Controller; Control Operation:Auto/Manual, Ramp/Soak, Stand By, Valve Positioning; Control Output Current:0-20 mA; Control Output Relay Rating:264 VAC / 2 A; Control Type:On/Off, PID RoHS Compliant: NA |
| 中文描述： | 直接Rambus的內存RIMM的6400模塊技嘉32M的字x 16位 |
| 文件頁數： | 1/16頁 |
| 文件大小： | 126K |
| 代理商： | MC-4R64CEE6B-745 |
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
1999
MOS INTEGRATED CIRCUIT
MC-4R64CEE6B, 4R64CEE6C
Direct Rambus
TM
DRAM RIMM
TM
Module
64M-BYTE (32M-WORD x 16-BIT)
PRELIMINARY
DATA
SHEET
Document No. M14537EJ1V1DS00 (1st edition)
Date Published November 1999 NS CP (K)
Printed in Japan
The mark
#
shows major revised points.
Description
The Direct Rambus RIMM module is a general-purpose high-performance memory module subsystem suitable for
use in a broad range of applications including computer memory, personal computers, workstations, and other
applications where high bandwidth and low latency are required.
MC-4R64CEE6B, 4R64CEE6C modules consists of four 128M Direct Rambus DRAM (Direct RDRAM) devices
(
μ
PD488448). These are extremely high-speed CMOS DRAMs organized as 8M words by 16 bits. The use of
Rambus Signaling Level (RSL) technology permits 600MHz, 711MHz or 800MHz transfer rates while using
conventional system and board design technologies.
Direct RDRAM devices are capable of sustained data transfers at 1.25 ns per two bytes (10 ns per sixteen bytes).
The architecture of the Direct RDRAM enables the highest sustained bandwidth for multiple, simultaneous,
randomly addressed memory transactions. The separate control and data buses with independent row and column
control yield over 95 % bus efficiency. The Direct RDRAM's 32 banks support up to four simultaneous transactions
per device.
Features
184 edge connector pads with 1mm pad spacing
64 MB Direct RDRAM storage
Each RDRAM
has 32 banks, for 128 banks total on module
Gold plated contacts
RDRAMs use Chip Scale Package (CSP)
Serial Presence Detect support
Operates from a 2.5 V supply
Low power and powerdown self refresh modes
Separate Row and Column buses for higher efficiency
相關PDF資料 |
PDF描述 |
|---|---|
| MC-4R64CEE6B-845 | Direct Rambus DRAM RIMM Module 64M-BYTE 32M-WORD x 16-BIT |
| MC-4R64CEE6C | Direct Rambus DRAM RIMM Module 64M-BYTE 32M-WORD x 16-BIT |
| MC-4R64CEE6C-653 | Direct Rambus DRAM RIMM Module 64M-BYTE 32M-WORD x 16-BIT |
| MC-4R64CEE6C-745 | Direct Rambus DRAM RIMM Module 64M-BYTE 32M-WORD x 16-BIT |
| MC-4R64CEE6C-845 | Direct Rambus DRAM RIMM Module 64M-BYTE 32M-WORD x 16-BIT |
相關代理商/技術參數 |
參數描述 |
|---|---|
| MC-4R64CEE6B-845 | 制造商:NEC 制造商全稱:NEC 功能描述:Direct Rambus DRAM RIMM Module 64M-BYTE 32M-WORD x 16-BIT |
| MC-4R64CEE6C | 制造商:NEC 制造商全稱:NEC 功能描述:Direct Rambus DRAM RIMM Module 64M-BYTE 32M-WORD x 16-BIT |
| MC-4R64CEE6C-653 | 制造商:NEC 制造商全稱:NEC 功能描述:Direct Rambus DRAM RIMM Module 64M-BYTE 32M-WORD x 16-BIT |
| MC-4R64CEE6C-745 | 制造商:NEC 制造商全稱:NEC 功能描述:Direct Rambus DRAM RIMM Module 64M-BYTE 32M-WORD x 16-BIT |
| MC-4R64CEE6C-845 | 制造商:NEC 制造商全稱:NEC 功能描述:Direct Rambus DRAM RIMM Module 64M-BYTE 32M-WORD x 16-BIT |
發布緊急采購，3分鐘左右您將得到回復。