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參數資料
型號: MC-4R64FKE8S
廠商: Elpida Memory, Inc.
英文描述: Direct Rambus DRAM SO-RIMM Module
中文描述: 直接Rambus公司的DRAM的SO - RIMM的模塊
文件頁數: 1/14頁
文件大小: 124K
代理商: MC-4R64FKE8S
Document No. E0140N30 (Ver. 3.0)
Date Published June 2002 (K) Japan
URL: http://www.elpida.com
Elpida Memory,Inc. 2002
Elpida Memory, Inc. is a joint venture DRAM company of NEC Corporation and Hitachi, Ltd.
DATA SHEET
Direct Rambus DRAM SO-RIMM
TM Module
MC-4R64FKE8S (32M words
×××× 18 bits)
Description
The Direct Rambus SO-RIMM module is a general-
purpose high-performance memory module subsystem
suitable for use in a broad range of applications
including
computer
memory,
mobile
personal
computers, networking systems, and other applications
where high bandwidth and low latency are required.
MC-4R64FKE8S modules consists of two 288M Direct
Rambus
DRAM
(Direct
RDRAM)
devices
(
PD488588). These are extremely high-speed CMOS
DRAMs organized as 16M words by 18 bits. The use
of Rambus Signaling Level (RSL) technology permits
800MHz transfer rates while using conventional system
and board design technologies.
Direct RDRAM devices are capable of sustained data
transfers at 1.25ns per two bytes (10ns per 16 bytes).
The architecture of the Direct RDRAM enables the
highest sustained bandwidth for multiple, simultaneous,
randomly addressed
memory transactions.
The
separate control and data buses with independent row
and column control yield high bus efficiency.
The
Direct RDRAM's multi-bank architecture supports up to
four simultaneous transactions per device.
Features
160 edge connector pads with 0.65mm pad spacing
64MB Direct RDRAM storage
Each RDRAM has 32 banks, for 64 banks total on
module
Gold plated contacts
RDRAMs use Chip Scale Package (CSP)
Serial Presence Detect support
Operates from a 2.5V supply
Powerdown self refresh modes
Separate Row and Column buses for higher
efficiency
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