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參數(shù)資料
| 型號： | MC-4R96CPE6C-745 |
| 廠商： | NEC Corp. |
| 英文描述： | Direct Rambus DRAM RIMM Module 96M-BYTE 48M-WORD x 16-BIT |
| 中文描述： | 直接Rambus的內(nèi)存模塊9600 RIMM的技嘉4800字× 16位 |
| 文件頁數(shù)： | 1/16頁 |
| 文件大小： | 131K |
| 代理商： | MC-4R96CPE6C-745 |
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confirm that this is the latest version.
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2000
MOS INTEGRATED CIRCUIT
MC-4R96CPE6C
Direct Rambus
TM
DRAM RIMM
TM
Module
96M-BYTE (48M-WORD x 16-BIT)
PRELIMINARY
DATA
SHEET
Document No. M14806EJ2V0DS00 (2nd edition)
Date Published August 2000 NS CP (K)
Printed in Japan
The mark
#
shows major revised points.
Description
The Direct Rambus RIMM module is a general-purpose high-performance memory module subsystem suitable for
use in a broad range of applications including computer memory, personal computers, workstations, and other
applications where high bandwidth and low latency are required.
MC-4R96CPE6C modules consists of six 128M Direct Rambus DRAM (Direct RDRAM) devices (
μ
PD488448).
These are extremely high-speed CMOS DRAMs organized as 8M words by 16 bits. The use of Rambus Signaling
Level (RSL) technology permits 600MHz, 711MHz or 800MHz transfer rates while using conventional system and
board design technologies.
Direct RDRAM devices are capable of sustained data transfers at 1.25 ns per two bytes (10 ns per sixteen bytes).
The architecture of the Direct RDRAM enables the highest sustained bandwidth for multiple, simultaneous,
randomly addressed memory transactions. The separate control and data buses with independent row and column
control yield over 95 % bus efficiency. The Direct RDRAM's 32 banks support up to four simultaneous transactions
per device.
Features
184 edge connector pads with 1mm pad spacing
96 MB Direct RDRAM storage
Each RDRAM
has 32 banks, for 192 banks total on module
Gold plated contacts
RDRAMs use Chip Scale Package (CSP)
Serial Presence Detect support
Operates from a 2.5 V supply
Low power and powerdown self refresh modes
Separate Row and Column buses for higher efficiency
Over Drive Factor (ODF) support
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