
HIGH GAIN CATV
POWER DOUBLER AMPLIFIER
MC-7842
MC-7843
OUTLINE DIMENSIONS
(Units in mm)
PACKAGE OUTLINE H02
FEATURES
GALLIUM ARSENIDE ACTIVE DEVICES
HIGH GAIN/LOW DISTORTION
MC-7842: 22 dB Linear Gain
MC-7843: 24 dB Linear Gain
LOW DC CURRENT DRAW
375 mA MAX DC Current (360 TYP)
LOW GAIN CHANGE OVER TEMP
0.5 dB TYP change from -30 to +100
°
C
HIGH RELIABILITY/RUGGEDNESS
Withstands environmental extremes as well as Silicon
devices (surge, ESD, etc.)
INDUSTRY COMPATIBLE PACKAGE
DESCRIPTION
The MC-7842 and MC-7843 are GaAs hybrid integrated cir-
cuits designed to be used as the output stage in CATV cable
distribution amplifier applications up to 870 MH
z.
The only dif-
ference between the MC-7842 and the MC-7843 is gain of
about 22 dB and 24 dB respectively. With this product, NEC
has made significant advancements to their initial power dou-
bler product offering, including lower distortion, higher crash
point, less variation in gain over temperature, a reduction in
out of band gain at the high end, and improved ability to sur-
vive an overdrive. Like the previous products, these devices
survive such hazards as surge and ESD as well as their sili-
con competitors, but deliver superior performance with low
DC current required. All devices are assembled and tested
using fully automated equipment to maximize consistency in
part to part performance, and reliability is assured by NEC's
stringent quality and process control procedures. Both parts
come in industry compatible hybrid packages.
V
DD
9
1
In
Out
Gnd
2 3 7 8
2.54
±
0.38
21.5 MAX
1
6-32 unc 2B
2.54
±
0.25
1 2 3
5
7 8 9
4.19
±
0.13
14.85 MAX
4.25
- 0.35
4.0
±
0.25
5
10.75
±
0.25
27.5 MAX
38.1
±
0.25
45.08 MAX
0.51
±
0.05
0.51
±
0.05
2
±
0
3.2 MAX
A
0.38.. A
25.4
±
0.25
19.05
±
0.38
8.1 MAX
2.5
6.3
±
0.05
California Eastern Laboratories
PART NUMBER
PARAMETERS
MC-7842
TYP
–
–
0.9
–
MC-7843
TYP
–
–
0.9
–
SYMBOLS
BW
G
L
S
G
f
UNITS
MHz
dB
dB
dB
MIN
50
22.0
0.3
–
MAX
870
23.5
1.5
1.0
MIN
50
24.0
0.3
–
MAX
870
25.5
1.5
1.0
CONDITIONS
Frequency Range
Linear Gain
Gain Slope
Gain Flatness
f = 870 MHz
50 to 870 MHz
50 to 870 MHz;
Peak to Valley
50 MHz
870 MHz
NF
Noise Figure
dB
dB
dB
dBc
dBc
dBc
–
–
–
–
6.3
6.8
375
-60
-55
-63
–
–
–
–
6.0
6.5
375
-60
-55
-63
I
DD
CTB
X-Mod
CSO
Operating Current, P
IN
= none
Composite Triple Beat Distortion
Cross Modulation
1
Composite Second Order Distortion
275
–
–
–
275
–
–
–
-64
-60
-66
-64
-60
-66
R
L
in/out
Input/Output Return Loss
dB
dB
dB
dB
20.0
19.0
17.5
16.0
–
–
–
–
–
–
–
–
20.0
19.0
17.5
16.0
–
–
–
–
–
–
–
–
40 to 160 MHz
160 to 320 MHz
320 to 640 MHz
640 to 870 MHz
ELECTRICAL CHARACTERISTICS
(T
CASE
= 30
°
C, V
DD
= 24 V, Z
S
= Z
L
= 75
)
110 channels,
Vout = +50dBmV,
at 745.25 MHz,
10dB tilted across
the band.
Note:
1. Measured per US standard methods and procedures (using selective level meter).