Table 5. 10EP DC CHARACTERISTICS, PECL VCC

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參數(shù)資料
型號(hào)： MC100EP101FAR2G
廠商： ON Semiconductor
文件頁(yè)數(shù)： 4/9頁(yè)
文件大小： 0K
描述： IC GATE OR/NOR QUAD 4INP 32LQFP
標(biāo)準(zhǔn)包裝： 2,000
系列： 100EP
邏輯類型： 或非門/或門
電路數(shù)： 4
輸入數(shù)： 16 輸入（4，4，4，4）
施密特觸發(fā)器輸入： 無
輸出類型： 差分
電源電壓： 3 V ~ 5.5 V
工作溫度： -40°C ~ 85°C
安裝類型： 表面貼裝
封裝/外殼： 32-LQFP
供應(yīng)商設(shè)備封裝： 32-LQFP（7x7）
包裝： 帶卷 (TR)
其它名稱： MC100EP101FAR2GOS
MC10EP101, MC100EP101
http://onsemi.com
4
Table 5. 10EP DC CHARACTERISTICS, PECL VCC = 3.3 V, VEE = 0 V (Note 2)
40°C
25°C
85°C
Symbol
Characteristic
Min
Typ
Max
Min
Typ
Max
Min
Typ
Max
Unit
IEE
Power Supply Current
45
57
75
45
58
75
45
59
75
mA
VOH
Output HIGH Voltage (Note 3)
2165
2290
2415
2230
2355
2480
2290
2415
2540
mV
VOL
Output LOW Voltage (Note 3)
1365
1490
1615
1430
1555
1680
1490
1615
1740
mV
VIH
Input HIGH Voltage (SingleEnded)
2090
2415
2155
2480
2215
2540
mV
VIL
Input LOW Voltage (SingleEnded)
1365
1690
1460
1755
1490
1815
mV
IIH
Input HIGH Current
150
mA
IIL
Input LOW Current
150
mA
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
2. Input and output parameters vary 1:1 with VCC. VEE can vary +0.3 V to 2.2 V.
3. All loading with 50 W to VCC 2.0 V.
Table 6. 10EP DC CHARACTERISTICS, PECL VCC = 5.0 V, VEE = 0 V (Note 4)
40°C
25°C
85°C
Symbol
Characteristic
Min
Typ
Max
Min
Typ
Max
Min
Typ
Max
Unit
IEE
Power Supply Current
45
57
75
45
58
75
45
59
75
mA
VOH
Output HIGH Voltage (Note 5)
3865
3990
4115
3930
4055
4180
3990
4115
4240
mV
VOL
Output LOW Voltage (Note 5)
3065
3190
3315
3130
3255
3380
3190
3315
3440
mV
VIH
Input HIGH Voltage (SingleEnded)
3790
4115
3855
4180
3915
4240
mV
VIL
Input LOW Voltage (SingleEnded)
3065
3390
3130
3455
3190
3515
mV
IIH
Input HIGH Current
150
mA
IIL
Input LOW Current
150
mA
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
4. Input and output parameters vary 1:1 with VCC. VEE can vary +2.0 V to 0.5 V.
5. All loading with 50 W to VCC 2.0 V.
Table 7. 10EP DC CHARACTERISTICS, NECL VCC = 0 V, VEE = 5.5 V to 3.0 V (Note 6)
40°C
25°C
85°C
Symbol
Characteristic
Min
Typ
Max
Min
Typ
Max
Min
Typ
Max
Unit
IEE
Power Supply Current
45
57
75
45
58
75
45
59
75
mA
VOH
Output HIGH Voltage (Note 7)
1135 1010
885
1070
945
820
1010
885
760
mV
VOL
Output LOW Voltage (Note 7)
1935 1810 1685 1870 1745 1620 1810 1685 1560
mV
VIH
Input HIGH Voltage (SingleEnded)
1210
885
1145
820
1085
760
mV
VIL
Input LOW Voltage (SingleEnded)
1935
1610 1870
1545 1810
1485
mV
IIH
Input HIGH Current
150
mA
IIL
Input LOW Current
150
mA
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
6. Input and output parameters vary 1:1 with VCC.
7. All loading with 50 W to VCC 2.0 V.
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MC100EP101MNR4 制造商:ON Semiconductor 功能描述:
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MC100EP105 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:3.3V / 5VECL Quad 2-Input Differential AND/NAND
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