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| 型號(hào)： | MC14082BDR2G |
| 廠商： | ON Semiconductor |
| 文件頁數(shù)： | 1/12頁 |
| 文件大小： | 0K |
| 描述： | IC GATE AND DUAL CMOS 14-SOIC |
| 標(biāo)準(zhǔn)包裝： | 2,500 |
| 系列： | 4000B |
| 邏輯類型： | 與門 |
| 電路數(shù)： | 2 |
| 輸入數(shù)： | 4 |
| 電源電壓： | 3 V ~ 18 V |
| 電流 - 靜態(tài)（最大值）： | 1µA |
| 輸出電流高，低： | 8.8mA，8.8mA |
| 邏輯電平 - 低： | 1.5 V ~ 4 V |
| 邏輯電平 - 高： | 3.5 V ~ 11 V |
| 額定電壓和最大 CL 時(shí)的最大傳播延遲： | 100ns @ 15V，50pF |
| 工作溫度： | -55°C ~ 125°C |
| 安裝類型： | 表面貼裝 |
| 供應(yīng)商設(shè)備封裝： | 14-SOICN |
| 封裝/外殼： | 14-SOIC（0.154"，3.90mm 寬） |
| 包裝： | 帶卷 (TR) |
Semiconductor Components Industries, LLC, 2013
April, 2013 Rev. 10
1
Publication Order Number:
MC14001B/D
MC14001B Series
B-Suffix Series CMOS Gates
MC14001B, MC14011B, MC14023B,
MC14025B, MC14071B, MC14073B,
MC14081B, MC14082B
The B Series logic gates are constructed with P and N channel
enhancement mode devices in a single monolithic structure
(Complementary MOS). Their primary use is where low power
dissipation and/or high noise immunity is desired.
Features
Supply Voltage Range = 3.0 Vdc to 18 Vdc
All Outputs Buffered
Capable of Driving Two Lowpower TTL Loads or One Lowpower
Schottky TTL Load Over the Rated Temperature Range.
Double Diode Protection on All Inputs Except: Triple Diode
Protection on MC14011B and MC14081B
PinforPin Replacements for Corresponding CD4000 Series
B Suffix Devices
These Devices are PbFree and are RoHS Compliant
NLV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AECQ100
Qualified and PPAP Capable
MAXIMUM RATINGS (Voltages Referenced to VSS)
Symbol
Parameter
Value
Unit
VDD
DC Supply Voltage Range
0.5 to +18.0
V
Vin, Vout Input or Output Voltage Range
(DC or Transient)
0.5 to VDD + 0.5
V
Iin, Iout
Input or Output Current
(DC or Transient) per Pin
±10
mA
PD
Power Dissipation, per Package
(Note 1)
500
mW
TA
Ambient Temperature Range
55 to +125
°C
Tstg
Storage Temperature Range
65 to +150
°C
TL
Lead Temperature
(8Second Soldering)
260
°C
VESD
ESD Withstand Voltage
Human Body Model
Machine Model
Charged Device Model
> 3000
> 300
N/A
V
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Temperature Derating:
Plastic “P and D/DW” Packages: – 7.0 mW/_C From 65_C To 125_C
This device contains protection circuitry to guard against damage due to high
static voltages or electric fields. However, precautions must be taken to avoid
applications of any voltage higher than maximum rated voltages to this
highimpedance circuit. For proper operation, Vin and Vout should be constrained
to the range VSS v (Vin or Vout) v VDD.
Unused inputs must always be tied to an appropriate logic voltage level
(e.g., either VSS or VDD). Unused outputs must be left open.
Device
Description
DEVICE INFORMATION
MC14001B
Quad 2Input NOR Gate
MC14011B
Quad 2Input NAND Gate
MC14023B
Triple 3Input NAND Gate
MC14025B
Triple 3Input NOR Gate
MC14071B
Quad 2Input OR Gate
MARKING
DIAGRAMS
1
14
PDIP14
P SUFFIX
CASE 646
MC140xxBCP
AWLYYWWG
SOIC14
D SUFFIX
CASE 751A
TSSOP14
DT SUFFIX
CASE 948G
1
14
140xxBG
AWLYWW
14
0xxB
ALYWG
G
1
14
xx
= Specific Device Code
A
= Assembly Location
WL, L
= Wafer Lot
YY, Y
= Year
WW, W = Work Week
G or G
= PbFree Package
MC14073B
Triple 3Input AND Gate
MC14081B
Quad 2Input AND Gate
MC14082B
Dual 4Input AND Gate
See detailed ordering and shipping information in the package
dimensions section on page 8 of this data sheet.
ORDERING INFORMATION
http://onsemi.com
(Note: Microdot may be in either location)
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